针对p+发射区受主杂质不完全离化现象导致的SiC光触发晶闸管（LTT）性能差的问题，本项目提出NiO/SiC空穴注入增强型LTT方案，以p-NiO/n-SiC异质结替代SiC p+n结作为LTT的阳极发射结，利用p-NiO/n-SiC异质结高空穴注入比这一性质提高阳极发射结的空穴注入效率，消除p型SiC受主杂质低电离现象对LTT性能的不良影响。项目采用理论与实验相结合的方法，对p-NiO/n-SiC异质结的制备、特性及电流输运机制进行系统研究，建立NiO/SiC异质结的器件级仿真模型。在此基础上，设计SiC基NiO/SiC异质结空穴注入增强型LTT新结构并建立数值仿真模型，优化器件结构参数，研究器件静、动态性能，探究NiO/SiC异质发射结对SiC LTT性能的增强机理，完善NiO/SiC空穴注入增强型LTT的理论研究，为解决SiC LTT光触发性能差这一瓶颈问题提供理论支持与科学依据。

Aiming at the poor performances of SiC light triggered thyristor (LTT) caused by incomplete ionization of acceptor impurities in p+ emitter region, NiO/SiC hole-injection enhanced LTT is proposed in the project. To eliminate harmful effects of low ionization of acceptor impurities in p type SiC, p-NiO/n-SiC heterojunction is used to replace SiC p+n junction to conduct as anode emitter junction in LTT. The character of high hole-injection ratio of p-NiO/n-SiC heterojunction is used to enhance the hole-injection efficiency of anode emitter junction. With the combination of theory and experiment, device level simulation model of p-NiO/n-SiC heterojunction will be setup through the researches on fabrication, performances and current transport mechanism of p-NiO/n-SiC heterojunction in the project. And on this basis, the novel structure of SiC based NiO/SiC hole-injection enhanced LTT will be designed and the numerical simulation model of the novel LTT will be setup. Moreover, the structure parameters, static and dynamic performances of the device will be optimized and studied. The enhancement mechanism of NiO/SiC heterojunction on the performance of SiC LTT and theoretical researches on NiO/SiC hole injection enhanced LTT will be explored and improved to provide theoretical support and scientific basis for solving the bottleneck problem of SiC LTT's poor light trigger performance.