基于SiPM双端读出的高集成度射线成像电子学电荷、时间测量技术研究

批准号:
12005233
项目类别:
青年科学基金项目
资助金额:
24.0 万元
负责人:
周魏
依托单位:
学科分类:
核技术在其他领域中的应用
结题年份:
2023
批准年份:
2020
项目状态:
已结题
项目参与者:
周魏
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中文摘要
射线成像技术广泛应用于医学、材料科学、国防、交通、无损检测、安全检查等领域,其中电子学的电荷、时间测量精度和集成度是成像系统的关键指标。目前射线成像系统为了获得更高性能(空间分辨、时间分辨、计数率、动态范围等),其探测器像素尺寸越来越小,输出信号路数越来越多,导致了基于分立器件的成像电子学现状“要么降低电子学集成度来保证其电荷、时间精度,要么降低电子学测量精度来保证集成度”。本课题基于上述研究现状,拟采用SiPM双端读出的方式:其中一端采用“FPGA快放电控制”电荷测量技术、另一端采用“高域反馈、低域触发”定时技术,并结合基于FPGA的TDC测量方式,在不降低电荷、时间测量精度的前提下,使用少量元器件实现高集成度射线成像电子学系统,并为将来相关ASIC的研究工作奠定基础。
英文摘要
Radiographic techniques are widely used in the fields of medicine, materials science, national defense, transportation, nondestructive testing, safety inspection, and so on. The accuracy of charge and timing measurement and the integration of electronics are the key indicators of radiographic system. Currently, the pixel size of detectors are designed to be smaller and the channel number of output signals is becoming larger in order to obtain higher performance (spatial resolution, time resolution, counting rate, dynamic range, etc.) for radiographic system. These new designing of detectors led to the present situation of discrete electronics "degrade the integration to ensure accuracy of charge and time, or degrade measurement accuracy to ensure integration". this proposal will study readout method based on the double ports structure of SiPM by using one port of the SiPM for charge measurement based on “the FPGA fast discharge control " technology, and the other side for timing measurement based on “high voltage threshold feedback, low voltage threshold triggering " technology, and by combining with FPGA-based TDC technology. Without the degradation of charge and timing performance, we expect to realize high integration readout electronics prototype based on discrete components through this proposal, and contribute to the ASIC design based on the research results of this proposal in the future.
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DOI:10.1088/1748-0221/17/07/p07011
发表时间:2022
期刊:Journal of Instrumentation
影响因子:1.3
作者:Y. Zhang;D. Li;T. Tong;X. Huang;Y. Wang;Y. Liu;M. Zhu;W. Zhou;W. Zhang;Z. Zhang;R. Shi;L. Wei
通讯作者:Y. Zhang;D. Li;T. Tong;X. Huang;Y. Wang;Y. Liu;M. Zhu;W. Zhou;W. Zhang;Z. Zhang;R. Shi;L. Wei
国内基金
海外基金
