BiVO4具有可见光响应特性、优异的光电性能和合适的能带结构，是目前发展最为迅速的光阳极材料之一。然而，由于光生载流子复合严重和缓慢的表面水氧化动力学，导致其光生载流子分离和传输效率较低。针对这一科学问题，本项目拟通过g-C3N4量子点修饰协同In3+离子掺杂构筑BiVO4基二维纳米阵列结构光阳极。利用In3+离子掺杂提高光阳极内部光生载流子的分离与传输效率和通过g-C3N4与In3+离子掺杂BiVO4之间形成的异质结提高光阳极表面载流子的传输与注入效率，同时实现光阳极内部和表面载流子的有效分离与传输。通过光致发光谱、电化学阻抗谱等测试手段研究并阐述量子点修饰协同离子掺杂对光生载流子分离与传输特性的影响规律；结合密度泛函理论研究，揭示量子点修饰协同离子掺杂对BiVO4光阳极的光生载流子分离与传输特性的调控机制，为BiVO4光阳极的可控构筑及其高性能光电化学电池的优化设计提供实验与理论指导。

BiVO4 has become one of the most rapidly developed photoanode material because of its visible light harvesting ability, excellent photoelectric properties and suitable energy band structure. However, BiVO4 exhibits a low charge transfer and separation efficiency due to its rapid recombination of photo-generated carriers and slow surface water oxidation kinetics. To solve this scientific problem, this project will construct BiVO4-based two-dimensional nanoarray photoanodes by modifying g-C3N4 quantum dots and doping In3+ ion. In this photoanode, the efficient separation and transport of internal and surface carriers in the photoanode can be realized simultaneously by doping In3+ ion to improve the separation and transfer efficiency of internal photo-generated carriers and via the heterojunction formed between the g-C3N4 and In3+ ion doped BiVO4 interface to promote the transport and injection of surface charges of the photoanode. The influence mechanism of quantum dot modification and ion doping on the photo-generated carrier separation and transfer properties will be revealed by the measurements and investigations of photoluminescence and electrochemical impedance spectroscopy. Moreover, the mechanism of photo-generated carrier separation and transport properties of BiVO4 photoanodes will be elucidated by density functional theory combined with experimental results. The results of this project will provide experimental and theoretical guidance for the controlled construction of BiVO4 photoanodes and the optimization design of high performance photoelectrochemical cells.