在重金属/铁磁/氧化物结构的磁性器件中自旋轨道矩(SOT)效应驱动的磁化翻转和畴壁运动，不仅在理论上极大地丰富了自旋电子学的内容，而且在高密度信息存储器件方面有着重要的应用前景。目前关于自旋轨道矩的起因以及自旋轨道矩驱动磁化翻转的物理机制还没有被完全理解；与自旋轨道矩相关的微磁学理论也仍需要做进一步的发展。本项目将从实验和微磁学两个方面系统研究自旋轨道矩驱动的磁化翻转过程。具体地，我们将采用反常霍尔效应和磁光克尔效应研究垂直各向异性和易轴倾斜的重金属/铁磁/氧化物结构中自旋轨道矩驱动的磁化翻转过程，测量这些结构中自旋轨道矩有效场；最后在考虑薄膜和器件微结构的基础上，采用微磁学模拟研究自旋轨道矩驱动磁化翻转的动力学过程。通过上述的研究，我们期望能够理清自旋轨道矩驱动磁化翻转的物理机制，获得具有低阈值电流和无外场辅助的电流驱动磁化翻转，为自旋轨道矩磁性随机存储器的应用奠定理论基础。

The magnetization reversal and domain wall motion driven by spin orbital torque (SOT) effect in magnetic devices with heavy metal/ferromagnetic/oxide structures, not only greatly enrich the content of spintronics theoretically, and also has significant potential applications in ultrahigh density information storage devices. Currently the origin of SOT and the mechanism of SOT driven magnetization reversal have not been thoroughly understood. The micromagnetics of SOT still needs further improvement. In this project, the mechanism of SOT driven magnetization reversal will be analyzed by both experiments and micromagnetics. Specifically, we will study the SOT driven magnetization reversal process by anomalous Hall effect and magneto-optical Kerr effect, in heavy metal/ferromagnetic/oxide structures with both perpendicular anisotropy and tilted anisotropy. We will also measure the SOT effective field in these structures. Finally, by considering the microstructure of thin films and devices, we will study the dynamics process of SOT driven magnetization reversal by micromagnetics. Through the above research, we expect that the physical mechanism the SOT driven magnetization reversal can be clarified, and also SOT driven magnetization reversal with low threshold currents in absence of external magnetic field can be achieved, which will provide theoretical basis for spin-orbital torque magnetoresistive access memory (SOT-MRAM).