面向粒子探测的高压CMOS像素传感器芯片关键技术研究

近年来高压CMOS像素传感器展现出的速度快、抗辐照、集成度高等优异性能，使其成为粒子探测技术领域的研究热点之一。本项目基于国内高压CMOS工艺开展高压像素传感器研发，采用灵敏二极管高压偏置，电荷收集方式由热扩散转变为漂移，有效缩短了收集时间，显著提高抗辐照能力。尤其针对空间分辨要求不高的大面积粒子探测，能够体现出更大优势，如采用大尺寸像素，能够在保证速度和抗辐照前提下，有效降低功耗。本项目通过全功能像素传感器芯片设计和测试，掌握高压像素传感器及其读出电子学、数据获取的关键技术，为大面积应用于粒子探测提供可行性设计。

Recently, the high-voltage CMOS pixel sensor has demonstrated excellent performance such as high speed, high radiation tolerance, and high integration, making it one of the research hotspots in the field of particle detection technology. This project is to develop a high-voltage CMOS pixel sensor based on the domestic high-voltage CMOS process. It employs a sensing diode with a high-voltage bias and the charge collection mode is changed from thermal diffusion to drift, which reduces the collection time effectively and improves the radiation hardness significantly. Especially for large-area particle detection with low spatial resolution, it can show greater advantage. For example, the use of large-size pixel can reduce power consumption effectively while keeping fast readout speed and high radiation tolerance. The goal is to master the key technologies of high-voltage CMOS pixel sensor and its readout electronics and data acquisition through the development of full functional chip and the test. This will provide a feasible design for the application of large-area particle detection.