高精度SOI像素顶点探测器研究

面向希格斯物理精密研究的未来正负电子对撞机实验要求具有高分辨、快读出和低功耗顶点探测器系统，是粒子探测技术前所未有的挑战。无论是直线型正负电子对撞机（ILC、CLIC）还是环形正负电子对撞机（CEPC、FCC），高精度是尚未解决的共性问题，必须采用创新的方法开展研究。绝缘层上硅（SOI）像素探测器具有独特的优势，是目前国际上研发的主要技术方案之一。本项目基于已有的SOI像素探测器研究基础，拟在实现高精度指标上开展关键技术研究，包括低噪声小像素单元、带有时间标记的快速读出电路、以及最新的3D集成技术等，研发时间精度高、位置分辨好的像素芯片。同时，采用新的像素传感单元、像素内数字化和稀疏化读出电路设计，有效降低功耗，提高读出速度。通过芯片设计和性能研究，掌握先进硅像素探测器的关键技术，实现好于3微米的空间分辨和亚微秒级的时间精度，达到国际上先进水平。

The experiments for the future electron positron colliders, for the purpose of precision Higgs physics study, require a vertex detector system with high resolution, fast readout, and low power consumption, which is an unprecedented challenge of particle detection technology. To reach such high precision requirement, which is the common problem for both linear colliders (ILC and CLIC) and circular colliders (CEPC and FCC), it has to develop the silicon pixel detectors by using novel technologies. The pixel detector based on Silicon on Insulator (SOI) technology has its unique features, and becomes one of the main candidate solutions studied worldwide. Based on our cumulated studies on SOI pixel detector, this project initializes the research on key technologies to realize the high precision requirements. To develop high time and space resolution pixel chips, it needs full endeavours of novel design on low noise small pixel unite, fast on-chip readout circuitry with time-stamp, and explore of most advanced 3D integration technology. In the same time, to be effective on low power consumption and high speed readout, the development of pixel chip should be done by adapting novel design of sensing diode, in-pixel digitalization and sparsified readout circuitry. The purpose of research is to have know-how of critical technology for the advanced silicon pixel detector, by means of chip design and performance study, and to reach the advanced level in the world on the specifications of 3 micro-meter of spatial resolution and sub micro-second level of time resolution.