面向同步辐射应用的SOI探测技术研究

我国现有的同步辐射光源的实验线站升级和未来新光源的建设都对高性能探测器提出了迫切需求。本项目面向同步辐射衍射和散射实验对二维X射线探测器的需求，提出开展SOI像素探测器技术研究。基于最新研究进展和已有的研究基础，研究探测器系统的基本组成单元- - 芯片，妥善解决SOI探测技术固有的屏蔽和抗辐射问题，并针对高计数率X射线探测的要求研制片上集成电路。通过这些研究，为进一步研制大面积探测器系统完成关键的技术储备。本项目将国家需求与新技术研究相结合，试图以一个合理的切入点努力进入到硅像素探测器研究的世界前沿行列。这与国内其他项目组正在开展的混合型硅像探测器研究形成互补的两条发展路线，对于缩小我国在硅像素探测器方面与世界先进水平之间的差距有重要意义。

It has raised the urgent demands for the high performance detectors with beamline upgrades of existing synchrotron radiation facilities and construction of new light source in the future. According to the requirements of two-dimensional X-ray detectors for the diffraction and scattering experiments on synchrotron radiation light source, the technology study of SOI pixel detector has been proposed.Based on the current research status and our experience, we will concentrate to study the chip, the basic unit of the detector system, to solve properly the fundamental shielding and radiation tolerant problems of SOI technology, and to develop the integrated circuits with capability of high rate X-ray detection. By means of those efforts, it will achieve the accumulation of key technology for the development of large area detector system in the future. This research is to combine the national demands with state of the art technology, trying to reach the frontier of global silicon pixel detector research by using a suitable way. To become a complementary roadmap comparing the hybrid silicon pixel detector studies in China, it will be very important for the purpose of realizing the world level in this field.