金刚石色心原位测量杂质、缺陷和界面态的机理和方法研究

金刚石内杂质缺陷及与其他材料形成的异质界面是影响和决定其优异特性是否充分发挥的关键，其中的原子结构、键合态、物态性能甚至新奇量子特性的观测难以采用常规方法实现。金刚石色心由氮、硅等掺杂原子与邻近空位形成，却具有宏观可观测的荧光辐射特性，多用于检测材料表面的吸附杂质的特性，无法对材料内杂质、缺陷和界面进行性能表征和新奇现象探索。本项目通过与缺陷杂质邻近区域形成色心，建立局域场与色心自旋相互作用模型，检测色心的宏观荧光辐射特征进而实现原子级表征和调控甚至新奇量子现象研究。主要创新点在于：(1) 基于金刚石色心含有空位的特点，利用空位与缺陷相互转化和作用的机制和数理关系，建立色心与缺陷的耦合关系和作用模型；(2) 利用金刚石NV色心的非对称原子结构特征以及SiV色心中空穴的对称结构和自旋简并基态的特点，分别对极化场和非极化场进行高灵敏度检测；(3) 利用金刚石色心对界面热阻及肖特基异结进行表征。

Impurity, defects in diamond and heterogeneous interfaces with diamond and foreign materials are the key factors affecting and determining whether their excellent properties are fully explored. The observation of atomic structure, bonding state, physical properties and even novel quantum properties near and in these factors are difficult to be achieved by conventional characterization methods. The diamond color centers exhibit fluorescent radiation in the macroscopic scale by atomically structure of doping atoms such as nitrogen and silicon and adjacent vacancies. The interaction between local fields and spins of color centers near impurities, defects and interfaces in the diamond can be well established by intentionally introducing color centers adjacent to impurities, defects and interfaces. Based on the model of interaction, the characteristics of these impurities, defects, and interfaces can be detected and characterized..The major innovations of this project are: (1) Based on the interaction model between vacancy and defects, to build the mathemitical relation of diamond color centers and defects; (2) based on hole symmetry structure of SiV color center and spin degeneracy of the ground state, the non-polar field of stress, phonon and temperature are characterized; (3) the in-situ synthesis of the cavity by the microsphere template enhances the color center radiation, and the local phonon vibration mode is enhanced according to the interface thermal resistance, and the.metal - The influence of the electric field perturbation caused by the plasmon of the diamond interface on the diamond color center characterizes the interface of the diamond heterojunction device.