平带二维晶格的原子级精确构筑及其局域态调控研究
批准号:
12074302
项目类别:
面上项目
资助金额:
62.0 万元
负责人:
潘毅
依托单位:
学科分类:
凝聚态物质电子结构
结题年份:
2024
批准年份:
2020
项目状态:
已结题
项目参与者:
潘毅
中文摘要
具有无色散平带的二维晶格因其高简并局域态电子强关联效应,被预言存在分数量子霍尔效应、铁磁基态以及超导等新奇物理特性。其中超导态在魔角双层石墨烯平带体系中已被证实。然而理论预言的多数新奇物性目前尚待实验探索,主要原因是实验测量所需的平带晶格大多不易用常规方法制备或调控。本项目拟利用扫描隧道显微镜原子操纵技术,以单个原子或分子为格点单元,构筑具有Lieb、Breathing Kagome等平带二维晶格的人工量子结构,并研究这种多参数可调的模型体系中的局域态及其关联效应。为消除衬底费米能级附近电子态对平带的影响,我们将以几种半导体和氧化物为衬底;为实现对平带填充状态的精细调控,我们将通过调控局域表面势来微调体系费米能级位置。我们前期在III-V半导体表面人工量子结构和二维半导体Moire超晶格局域态等方面的工作为此项目奠定了基础。此项目成果将有助于平带局域态在未来信息器件中的应用。
英文摘要
The dispersionless flat band (FB) arising from two dimensional lattices of particular symmetry has attracted lots of research interests due to the strong correlation effects of microscopically degenerated localized states from the FB. It has been predicted that many exotic physical properties, like Fractional Quantum Hall effect, Ferromagnetic ground state and unconventional superconductivity, could be found in such systems. The recently observed superconductor state within the “magic angle” twisted bilayer graphene is a perfect example. However, the predicted 2D lattices with FB are largely unavailable for experimental investigation since they could not be synthesized by conventional growth method so far. We propose to tackle this problem by building atomic precision artificial quantum structures with FB lattices, like Diamond Ladder、Lieb、Breathing Kagome, by means of scanning tunneling microscope (STM) atom manipulation technique. Fine tuning of the lattice parameters and Fermi level could be achieved thanks to the high precision of atom manipulation by STM. Furthermore, the investigation of the compact localized states and strong correlation effect within such structures will be carried out. This study is facilitated by our previous works on the FB localized states of bilayer 2D semiconductors and artificial lattice constructed by atom manipulation on III-V semiconductor surfaces. We anticipate the new physics obtained in this project will be useful for the quantum information storage and processing in next generation electronic devices.
本项目面向平带晶格的理论设计、实验构筑、微观机理、能级调控、器件应用等方面系统展开。平带晶格是具有无色散平带的二维晶格因其高简并局域态电子的关联效应,蕴含了分数量子霍尔效应、铁磁基态以及超导等新奇物理性质,例如魔角双层石墨烯平带体系的超导态。理论预言的平带二维晶格往往不易生长且晶格参数难以调控,因此当前可供实验研究的平带晶格仍然非常少。本项目主要利用扫描隧道显微镜原子操纵技术,以单个原子或分子为格点单元,构筑具有Breathing Kagome等二维晶格的人工量子结构,研究这种多参数可调的平带模型体系中的局域态及其关联效应。为实现有能隙的拓扑平带,我们以几种III-V半导体和二维半导体衬底;通过外延生长、界面调控和操纵表面荷电原子等方法成功获得了平带晶格的设计构筑,并实施了能带调控,在此基础上通过器件构筑和输运测量获得了此类晶格的物性特征和潜在应用。此外,我还开发了一批专用的技术和设备,并获得了一定的转化成果和奖项。这些成果为单原子精度的原子制造领域的继续发展奠定了重要物理基础。..
III-V 族半导体InAs表面的STM原子操纵研究
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批准号:11704303
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项目类别:青年科学基金项目
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资助金额:24.0万元
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批准年份:2017
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负责人:潘毅
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依托单位:
国内基金
海外基金