顶栅场效应晶体管型传感器为气体传感与生物检测领域提供了一个高灵敏度、响应快速与低成本的测试平台。二维层状导电MoS2作为沟道材料，显示出巨大的应用潜力。实现二维层状MoS2材料实用化的关键在于实现其可控制备。本课题将采用创新的工艺技术和原理，一方面将化学气相沉积技术（CVD）与脉冲激光沉积技术相结合，实现对二维层状MoS2材料层数、晶面取向控制和界面调控，另一方面，采用微精细加工技术设计与制作场效应晶体管及气体传感器。结合原子尺度的表征分析技术，深入研究其沟道载流子输运机制，从理论和实验上揭示界面缺陷或状态对场效应晶体管器件特性的影响，为设计新型场效应晶体管的提供科学依据。为实现高选择性、高灵敏度的半导体气体传感器提供新的解决方案，包括关键材料体系和制备技术上的支持。该课题的实施，对发展类石墨烯二维材料在半导体纳米电子器件中的应用，具有重要意义。

Electronic sensors based on top-gated field-effect transistor (FET) offer a high sensitivity, fast respose, and low-cost sensing platform for gas-sensing and biological detections. Two-dimensional layer-structured conducting MoS2 is the most promising channel material in electronic sensors. Its controllable synthesis is the key to realize the practical applications of MoS2. This work will focus on the fabrication and gas-sensing properties of top-gated FET based gas sensor. One hand, The number of layers, crystallographic orientation and interface modification are realized by the combination of chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). On the other hand, the FET and gas sensor are designed and fabricated by micromachining technologies.The carrier transport mechanism in the FET channel will be studied with atomic-scale analysis techniques. The theoretical and experimental results will reveal the relationship between interfacial defects or states and transfer characteristics in FET, and provide the scientific fundamentalss for novel FET design. The new potential project on highly sensitive and selective semiconductor gas sensor will be proposed, including the key material system and fabrication processing. In conculsion, this work is of importance and significance to develop the applications of the graphene-like two-dimensional materials in nano-electronic devices.