BAs与金属半导体相互作用的研究

随着微纳电子器件的快速发展，热量消散技术成为了瓶颈，迫切需要能更有效地传导和散热的新材料。新合成的BAs表现出优异热传导特性，但要实现它的商业应用还有大量的工作要做，需要获得尺寸足够大的无缺陷晶体或良好的外延晶体膜及对其本征及异质结性能有深入系统的认识。针对这些问题本项目拟从理论上对BAs进行较系统的研究，找到生长面积大、品质优BAs晶体膜的生长条件和外延衬底，分析BAs与金属半导体形成的异质结势垒，研究各类材料在BAs上移动对界面性质及形成异质结势垒的影响，揭示BAs与金属半导体的匹配性质和输运特性以及外来原子对它的修饰作用，以期为高质量BAs材料制备与应用提供理论指导和相应的方案。

With the rapid development of micro and nano electronic devices, heat dissipation technology has become a bottleneck, and new materials that can conduct and dissipate heat more effectively are urgently needed. The newly synthesized BAs exhibits excellent heat conduction properties, but there is still a lot of work to be done to realize its commercial application. It is necessary to obtain a prefect crystal or a good epitaxial crystal film with large enough size, and have a systematic and in-depth understanding of its intrinsic and heterostructure properties. Therefore, in this project we will carry out a systematic study on BAs theoretically. We will search for the growth conditions and epitaxial substrate of the crystal film with large growth area and high quality and characterize the potential barrier of forming heterojunction between BAs and metal. The influence of shift between the metal/semiconductors and BAs on the interface properties and heterojunction potential barrier will be investigated. The structure matching properties and transport characteristics of BAs and metal, semiconductor will be discussed. The modification effect of foreign atoms is expected. We will provide a theoretical guidance and corresponding scheme for the preparation and application of high-quality BAs materials. Therefore, our results uncover the fundamental challenges and opportunities of BAs for applications in micro and nano devices