用于紫外探测非晶Ga2O3薄膜的可控制备、微观表征及响应机理分析

非晶Ga2O3薄膜中存在较强的结构无序和化学无序，因此表现出不同于β-Ga2O3薄膜的性质。当用于日盲紫外探测时，前者体现出兼具高响应度和快响应恢复速度的优势，同时低温制备有利于其在柔性领域的应用。但相关研究工作刚刚起步，不同生长条件制备的非晶Ga2O3薄膜性质和器件性能差异较大，光响应机理还不清楚。本项目拟利用磁控溅射和PLD方法通过改变生长和退火工艺调控非晶Ga2O3薄膜的性质，结合对薄膜性质和MSM器件性能的分析，对响应机理得出较明确的结论；在物理机理指导下优化薄膜生长和退火工艺，实现非晶Ga2O3薄膜和高性能探测器的可控制备；设计场效应晶体管探测器，结合非晶Ga2O3薄膜材料内增益和晶体管本征增益进一步提高器件性能，提升其对微弱紫外信号的快速探测能力。本项目以非晶Ga2O3薄膜的微观表征为基础，有望弄清其对日盲紫外光的响应机理，为高性能紫外探测材料和器件的获得找到更佳解决方案。

There exist strong structural disorder and chemical disorder in amorphous Ga2O3 thin film, therefore it exhibits different properties from β-Ga2O3 thin film. When it is applied in solar-blind ultraviolet photodetection, the former has the advantage that high responsivity and fast response recovery speed can be coexisted, and low-temperature preparation is beneficial to its application in the flexible electronics. However, related research work has just started, the properties and device performance of amorphous Ga2O3 thin films prepared under different growth conditions are quite different, and the photoresponse mechanism is still unclear. This project intends to use magnetron sputtering and PLD methods to control the properties of amorphous Ga2O3 thin film by changing the growth and annealing process, and get a clear conclusion on the response mechanism by combining the analysis of film properties and MSM device performance. Under the guidance of physical mechanism, the film growth and annealing process will be optimized to achieve the controllable preparation of amorphous Ga2O3 thin film and high-performance photodetector. Besides, the field-effect transistor structured photodetector will be designed to further improve the device performance by combining the internal gain of amorphous Ga2O3 thin film and the intrinsic gain of transistor, and to promote its fast detectability to weak ultraviolet signals. Based on the microscopic characterization of amorphous Ga2O3 thin film, this project is expected to clarify its response mechanism to solar-blind ultraviolet and find a better solution for obtaining high-performance ultraviolet detection material and device.