硒化物半导体材料表面增强拉曼散射机理及调控研究

半导体表面增强拉曼散射（SERS）基底具有显著的增强因子和良好的光谱稳定性，在非金属SERS研究中具有十分重要的地位。然而，由于基底-吸附分子交界面位置结构的特殊性，目前对于半导体SERS现象产生的微观机理以及如何利用界面处量子态变化进一步提升其SERS活性的问题一直缺乏统一认识，相应理论模型缺乏实验验证。本项目通过研究对硒化物半导体SERS体系中界面微观量子态变化与其SERS活性之间的关系，探究得到半导体基底-吸附分子耦合、界面诱导产生SERS现象的微观机制和规律；并通过外场及掺杂、界面设计手段实现半导体纳米材料SERS性能的优化。本项目的实施将有助于全面、深入的理解半导体材料产生SERS效应的增强机理，得到完整、统一的半导体SERS增强理论解释；为我国尽早拥有高效、稳定的半导体SERS基底材料，发展基于界面调控技术的新型半导体SERS探测传感器件奠定科学基础并提供发展思路。

Surface-enhanced Raman scattering (SERS) based on semiconductor has been proven to be a significant enhancement factor and good spectral stability, and has a very important position in the research of non-metallic SERS. However, due to the particularity of structure and position of the interface between substrate and adsorbed molecules , the microscopic mechanism of the semiconductor-SERS phenomenon and how to use the change of the quantum state at interface to enhance the SERS activities of semiconductor materials always lack a unified understanding. The theoretical model lacks experimental verifications. In this project, we plan to find the relationship between the microscopic quantum state at the interface and the SERS activity for the selenide semiconductor-SERS system, and explore the fundamental physical mechanism and rule of semiconductor-SERS characteristics induced by the substrate-molecular coupling. The SERS performances of semiconductor nanomaterials will be further optimized through external fields, doping, and interface design. The implementation of this project will help us to understand the micro-mechanism of the surface enhancement effect of semiconductor materials, and develop a complete and unified enhancement theory of the semiconductor-SERS. It will make a scientific foundation and provide development ideas for us to have efficient and stable semiconductor SERS substrate materials and develop new semiconductor SERS detection sensor devices as soon as possible.