硅基新型可控Ge量子点/SiGe薄膜微腔耦合结构的系统研究

硅基光电一体化集成是解决半导体微电子集成芯片越来越严重的功耗大、散热难和信号传输受限等问题的最有效的途径。但是，其发展面临一个目前难以克服的瓶颈：小尺寸和电泵浦的高性能硅基光源，其内在核心科学问题是间接带隙的硅基材料很低的量子转换效率。本项目将系统研究硅衬底上的新型可控Ge量子点/SiGe薄膜微腔结构；着重研究同时满足波长匹配和位置匹配的量子点/微腔结构中的光与物质相互作用及其产生的新奇物性；充分利用量子点中激子受到的量子限制效应、微腔对光子的调控作用以及激子和光子间的耦合效应，探索从电子特性和光子特性两方面的综合调控实现Ge量子点高效发光的新思路。本项目的研究将进一步认识腔量子电动力学的基本特性及其对微腔中的量子点光电性质的调控作用，制备具有优异光电特性的可控Ge量子点/SiGe薄膜微腔结构，探索制备小尺寸、电泵浦、低阈值的硅基激光器，为其在硅基光电一体化集成的高性能光源的应用打下基础。

The monolithic optical-electronic integrated circuits (MOEICs) on silicon have been expected to be the most efficient solution to the problems of high power consumption, poor heat dissipation and limited signal transmission in semiconductor microelectronic integrated chips. However, its development is confronted with a bottleneck: small size and electrically pumped Si-based light sources of high performance，which can hardly be realized at present. The intrinsic key scientific issue is the rather poor quantum efficiency of Si-based materials due to the indirect bandgap. In this project, innovative controlled Ge quantum-dots(QDs)/ SiGe thin-film microcavity coupling structures, which is compatible with the Si integration technology, will be systematically studied. Particularly, unique light-matter interactions and its related novel properties in the QDs/microcavity coupling structure with both wavelength matching and spatial matching between QD emissions and cavity modes will be primarily studied. The quantum confinement effect of excitons in QDs, the manipulation of photons by the microcavity, and the coupling between excitons and photons are fully utilized to explore a novel way towards the realization of overall high quantum efficiency of Ge QDs in aspects of comprehensive modulations on the electronic and the photonic properties.The results of this project will shed new light on the fundamental physics of cavity quantum electrodynamics and its manipulation on the optoelectronic properties of QDs in microcavities. The innovative controlled Ge QDs/SiGe microcavity with superior optoelectronic properties will be fabricated, which will be utilized to explore small size, electrically pumped and low threshold Si-based laser. They will have great potentials in the desired Si-based light source implemented in the MOEICs.