用于超导纳米线单光子探测的过渡金属硒化物超导薄膜生长及器件研究

超导纳米线单光子探测器（SNSPD）是一种新兴的单光子探测技术，已在通信、量子信息、光谱学等领域广泛应用。超导薄膜是SNSPD的最关键组成部分，决定了探测器的根本性能。目前常用的薄膜（NbN、MoSi等）仍存在均匀度差无法制备大阵列器件、稳定性差导致工艺复杂和高成本、超导能隙大难以对中红外光子响应等缺点。因此，新型超导薄膜的开发及其器件研制对SNSPD发展至关重要，也是目前信息领域研究的前沿热点与难点。本项目拟采用拓扑化学转化策略开发过渡金属硒化物薄膜，结合理论计算和原位表征技术探究材料的横向/纵向生长机理；通过表/界面工程系统探究薄膜超导性质的调控机制；结合数值仿真和工艺优化研制基于过渡金属硒化物超导薄膜的SNSPD器件。最终，本项目将实现过渡金属硒化物薄膜的可控生长，并研制出基于新材料的SNSPD器件,为设计和研制新型SNSPD器件提供思路。

Superconductor nanowire single photon detector (SNSPD) as a burgeoning single photon detection technology has been widely applied in communication, quantum information, spectroscopy and other fields. Superconducting thin film is the most critical component of SNSPD, which determines the fundamental performance of device. At present, the widely used superconducting films, e.g., NbN and MoSi, remains some disadvantages, including poor uniformity that hinders the fabrication of large-array device, chemical instability that increases the fabrication complexity and cost, and wide superconducting gaps that exhibits little response to mid-infrared photons. Thus, the exploitation of novel superconducting thin films and their devices is of great importance to the development of SNSPD, which is also the hot spot and difficult point in the information field research. This project uses topochemical transformation strategy to develop transition metal selenide (TMS) thin films, combines theoretical calculation and operando characterizations to study the lateral/vertical growth mechanism of TMS thin films, uses surface/interface engineering to systematically investigate the regulatory mechanism of the superconducting properties of TMS thin films, combines numerical simulation and process optimization to fabricate TMS-based SNSPD. Overall, this project will achieve the controllable growth of TMS thin films and the fabrication of TMS-based SNSPD, which provides ideas for the design and development of new SNSPDs.