高度取向黑磷砷形成与调控机制

砷高质资源化利用是解决有色行业砷污染问题的根本出路。黑磷砷二维材料具有红外探测应用的独特潜质，是红外光电器件领域具跨时代意义的新兴材料。但目前剥离所得的二维黑磷砷横向尺寸小(低于100μm)、晶体缺陷多，大大限制了其应用。其原因是前期黑磷砷块体材料的合成过程中，生成的黑磷砷晶体取向随机、结构连续性差。针对该问题，巧妙提出过渡层调控黑磷砷择优取向生长的新思路，以制备取向一致、结构连续的黑磷砷晶体。本项目拟开展以下研究：1.解析过渡层的结构特征，明确过渡层结构优化机制; 2.研究黑磷砷晶体在过渡层上择优取向生长规律与路径，揭示晶畴取向调控机制; 3.研究添加剂分子与黑磷砷{010}晶面结合作用，对黑磷砷晶畴间拼接的影响规律，揭示其对黑磷砷结构连续性的促进机理。项目旨在阐明黑磷砷在过渡层上的晶体择优取向与晶畴拼接机制，形成高质量黑磷砷制备技术原型，为砷高端新材料开发提供支持。

High-quality utilization of arsenic is fundamental way to solve arsenic pollution problem in non-ferrous metallurgy industry. Black arsenic phosphate (b-AsP) 2-dimensional material has unique potential in infrared detection application, and is a new material leading cross-age technical transformation in infrared photoelectric device field. However, the exfoliated 2D b-AsP at present has the problems of small lateral dimensions (lower than 100μm), and too much crystal defect co-existing, which greatly limits its application. The key reason for this problem is that the bulk b-AsP synthesized before exfoliation is randomly oriented and has low continuity in the crystal structure. For this problem, this project proposes a new idea that the b-AsP epitaxially grow in preferred orientation on a transition layer, aiming at synthesizing highly-oriented and continuous b-AsP crystal material. The following researches are planned to carried out: 1) resolution and characterization of crystal structure of transition layer, and determination of the structure optimization mechanism; 2) study of preferred orientation growth pattern and route of b-AsP crystal on transition layer, revealing the mechanism of crystal domain orientation control; 3) study of the influence of additive agent molecules bonding to {010} crystal facet upon the b-AsP crystal domain stitching, to clarify the mechanism in promotion of crystal structure continuity via molecules bonding effect. This project aims at revealing the mechanism of preferred orientation of b-AsP on transition layer and the stitching of b-AsP crystal domains, forming technology prototype of preparing high-quality b-AsP material, and also providing support to the development of advanced arsenic materials.