低雾度p型CuI薄膜的液相碘化动力学分析及其光电性能调控
结题报告
批准号:
62004117
项目类别:
青年科学基金项目
资助金额:
24.0 万元
负责人:
孙珲
依托单位:
学科分类:
半导体材料
结题年份:
2023
批准年份:
2020
项目状态:
已结题
项目参与者:
孙珲
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中文摘要
p型透明导电材料(TCM)薄膜是制备新型光电器件的关键材料。然而,其研究基础薄弱,光电性能难以满足应用需求。p型CuI兼具良好的载流子迁移率和较大的光学带隙,是极具潜力的p型透明导电材料,对于钙钛矿太阳能电池、全透明电子器件及功率互补逻辑电路的发展至关重要。但CuI薄膜通常具有粗糙的表面形貌和多晶结构,强烈的晶界散射导致CuI薄膜雾度高、透光率低;同时,针对CuI的研究尚缺少对其导电机制的准确描述,严重限制了CuI薄膜在新型光电器件中的应用。为此,本项目基于液相碘化反应,从优化CuI的碘化路径出发,通过异相成核和界面调控协同优化CuI的形核和生长过程,借助晶化动力学分析,建立实验参数与析晶速率之间的关系,进而探究晶化过程,实现低缺陷密度、高结晶质量的均一低雾度CuI薄膜的可控制备;项目从缺陷热力学角度系统研究CuI中受主缺陷的存在形式,通过具有不同空间分辨率的表征手段对CuI中的缺陷和电输运特性进行研究,从宏观和微观尺度分别探讨非晶相与晶界处的载流子输运行为,揭示空穴的产生复合机理,并提出有效的调控策略;通过分析载流子在非晶相和晶界处的传输行为,解析载流子的输运机制,构建CuI的导电模型,最终实现对p型CuI光电性能的调控。本项目有助于揭示CuI的p型导电机理,获得性能优异的p型透明导电材料,进一步推动p型透明导电材料的发展,为构建全透明电子器件及透明逻辑电路提供理论指导和技术支撑。
英文摘要
p-type transparent conductive material (TCM) is an essential part of the novel optoelectronic devices. However, systematic studies on p-type TCO are insufficient. Its poor optoelectronic properties cannot satisfy the application requirements. CuI as a promising p-type transparent conductive material combines good carrier mobility and large optical band gap, which is an imperative material for fabricate perovskite solar cells, fully transparent electronic devices and power complementary logic circuits. However, CuI films usually possesses rough surface and polycrystalline structure. The strong grain boundary scattering leads to the high haze and low light transmittance of CuI film. Meanwhile, there is no accurate description of its conduction mechanism. This severely limits its application in novel optoelectronic devices. This project started from optimizing the iodination path of CuI film based on liquid-phase iodination reaction, then synergistically optimize the nucleation and growth process through the heterogeneous nucleation and interfacial control. By means of the crystallization kinetic analysis, the relationship between the experimental parameters and the crystallization rate is analyzed, and the crystallization process is explored. It contributes to achieve the controllable preparation of uniform low haze CuI films with low defect density and high crystal quality. Then, the project systematically investigates the formation of the acceptor defects in CuI from the perspective of defect thermodynamics, discusses the carrier transport behavior between the amorphous phase and the grain boundary from the macro and micro scales, revealing the hole’s generation mechanism, and proposing the effective control strategies of the carrier concentration. By analyzing the transport behavior of carriers in the amorphous phase and grain boundaries, the carrier transport mechanism is analyzed, and the CuI conduction model is established. Finally, the regulation of the optoelectronic performance of p-type CuI can be realized. This study helps to reveal the p-type conductive mechanism of CuI and realize the p-type transparent conductive materials with excellent optoelectronic performance; also further promote the development of p-type transparent conductive materials, and contributes to provide the theoretical guidance and technical support for the construction of fully transparent electronic devices and transparent logic circuits.
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DOI:10.1088/1361-6528/ac990f
发表时间:2022-10
期刊:Nanotechnology
影响因子:3.5
作者:Zhi-Yue Li;Shumei Song;Wanxia Wang;Jianhong Gong;Yang Tong;M. Dai;Song-sheng Lin;Tianlin Yang;Hui Sun
通讯作者:Zhi-Yue Li;Shumei Song;Wanxia Wang;Jianhong Gong;Yang Tong;M. Dai;Song-sheng Lin;Tianlin Yang;Hui Sun
DOI:10.1016/j.surfin.2024.103902
发表时间:2024-02
期刊:Surfaces and Interfaces
影响因子:6.2
作者:Niannian Li;Jun Gao;Wanxia Wang;Sheng-Chi Chen;Kunlun Wang;Shumei Song;Chao-Kuang Wen;Hui Sun
通讯作者:Niannian Li;Jun Gao;Wanxia Wang;Sheng-Chi Chen;Kunlun Wang;Shumei Song;Chao-Kuang Wen;Hui Sun
DOI:10.1016/j.ceramint.2023.10.025
发表时间:2023-10
期刊:Ceramics International
影响因子:5.2
作者:Huan Luo;Hui Sun;Xiaolei Ye;Peipei Wang;Xing Zhao;P. Briois;Alain Billard
通讯作者:Huan Luo;Hui Sun;Xiaolei Ye;Peipei Wang;Xing Zhao;P. Briois;Alain Billard
DOI:10.1088/1361-6528/ac0dda
发表时间:2021-06
期刊:Nanotechnology
影响因子:3.5
作者:Anning Ding;Ruisong You;Shulin Luo;Jianhong Gong;Shumei Song;Kunlun Wang;B. Dai;Hui Sun
通讯作者:Anning Ding;Ruisong You;Shulin Luo;Jianhong Gong;Shumei Song;Kunlun Wang;B. Dai;Hui Sun
DOI:10.3390/ma14154097
发表时间:2021-07-23
期刊:Materials (Basel, Switzerland)
影响因子:--
作者:Qin LH;Yan YQ;Yu G;Zhang ZY;Zhama T;Sun H
通讯作者:Sun H
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