石墨相氮化碳（g-C3N4）是一种环境友好型非金属光催化材料。针对半导体光催化材料g-C3N4因其电荷分离较差而导致其光催化性能不足的问题，分别从促进g-C3N4本体电荷分离和抑制其自由载流子复合的内外两个角度出发，提出了通过静电纺丝技术构筑微反应器实现对g-C3N4厚度调控的策略，以达到使其厚度与本体电荷分离性质相契合的目的；通过原位引入宽窄带隙半导体实现Z-II型异质结构筑的策略，以达到同时延长g-C3N4自由载流子寿命的和改善空穴氧化能力的目的。本项目开展将为设计发展高活性g-C3N4基光催化剂提供可行参考。

Graphitic carbon nitride is an environmental-friendly non-metal photocatalytic material. The disadvantage of poor charge separation property of g-C3N4 always take negative effect to its photocatalytic activities. For conquering this problem, two strategies are carried out from the internal and external perspectives of promoting its charge separation property. First, the strategy of modulating the thickness of g-C3N4 by constructing microreactor via electrospinning technique is carried out in order to make the thickness suit the efficient separation of photogenerated electron-hole pairs. Second, the strategy of constructing Z-II style heterojunction by introducing a wide-bandgap and a narrow-bandgap semiconductor is carried out in order to simultaneously prolong the charge carriers’ lifetime and improve the oxidation capability of photogenerated holes. This project will provide a feasible reference for developing g-C3N4 based photocatalysts with high performance.