Quantum confinement of the Dirac surface states in topological-insulator nanowires.
Quantum confinement of the Dirac surface states in topological-insulator nanowires.
复制标题
DOI:
10.1038/s41467-021-21230-3
复制
发表时间:
2021-02-15
影响因子:
16.6
通讯作者:
Ando Y
中科院分区:
文献类型:
--
作者:
Münning F;Breunig O;Legg HF;Roitsch S;Fan D;Rößler M;Rosch A;Ando Y
The non-trivial topology of three-dimensional topological insulators dictates the appearance of gapless Dirac surface states. Intriguingly, when made into a nanowire, quantum confinement leads to a peculiar gapped Dirac sub-band structure. This gap is useful for, e.g., future Majorana qubits based on TIs. Furthermore, these sub-bands can be manipulated by a magnetic flux and are an ideal platform for generating stable Majorana zero modes, playing a key role in topological quantum computing. However, direct evidence for the Dirac sub-bands in TI nanowires has not been reported so far. Here, using devices fabricated from thin bulk-insulating (Bi1−xSbx)2Te3 nanowires we show that non-equidistant resistance peaks, observed upon gate-tuning the chemical potential across the Dirac point, are the unique signatures of the quantized sub-bands. These TI nanowires open the way to address the topological mesoscopic physics, and eventually the Majorana physics when proximitized by an s-wave superconductor. In topological insulator nanowires quantized Dirac sub-bands are expected, but direct evidence is still missing. Here, the authors report signatures of sub-bands in the gate-voltage dependence of the resistance by tuning the chemical potential in (Bi1−xSbx)2Te3 nanowires through the Dirac point.
登录
查看更多内容
影响因子:
4.6
作者:
Jauregui LA;Pettes MT;Rokhinson LP;Shi L;Chen YP
通讯作者:
Chen YP
影响因子:
4.6
作者:
Dufouleur J;Veyrat L;Dassonneville B;Xypakis E;Bardarson JH;Nowka C;Hampel S;Schumann J;Eichler B;Schmidt OG;Büchner B;Giraud R
通讯作者:
Giraud R
影响因子:
38.3
作者:
Xiu, Faxian;He, Liang;Wang, Kang L.
通讯作者:
Wang, Kang L.
影响因子:
4
作者:
Baessler, Svenja;Hamdou, Bacel;Nielsch, Kornelius
通讯作者:
Nielsch, Kornelius
影响因子:
8.6
作者:
Zhang, Yi;Vishwanath, Ashvin
通讯作者:
Vishwanath, Ashvin