Comparative study of semiconductor devices based on a meta-parameterised approach: SiC MOSFET vs Si IGBT technologies
Comparative study of semiconductor devices based on a meta-parameterised approach: SiC MOSFET vs Si IGBT technologies
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基于元参数化方法的半导体器件比较研究：SiC MOSFET 与 Si IGBT 技术
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
M. Molinas
中科院分区：
文献类型：
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作者：
R. Barrera;T. Isobe;M. Molinas
本文提出了一种评估和比较功率半导体器件（PSD）的元参数化方法。介绍了电力电子开关评估所需的一般模型和主要PSD参数。然后，对Si-IGBT和SiC-MOSFET两种PSD技术进行元参数化。对这些PSD技术的电流性能、频率依赖性和高估因子进行了比较分析。此外，还考虑了50kW 2L-VSI和20kW DC-DC转换器，以显示如何使用元参数来评估PSD技术对转换器性能的影响。
This paper presents a meta-parameterised approach for evaluation and comparison of Power Semiconductors Devices (PSD). General models and main PSD parameters needed for evaluation of power electronics switches are presented. Then, meta-parameterisation is performed for two PSD technologies, Si-IGBT and SiC-MOSFET. A comparative analysis based on current capability, frequency dependency and overrated factor for these PSD technologies is presented. Even more, a 50kW 2L-VSI and a 20kW DC-DC converter are considered to show how meta-parameters can be used to evaluate the impact of PSD technology on converter performance.
DOI：
10.1109/iecon.2015.7392188
发表时间：
2015-07
期刊：
IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society
影响因子：
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作者：
N. Roscoe;Y. Zhong;S. Finney
通讯作者：
N. Roscoe;Y. Zhong;S. Finney