The Influence of Quantum Confinement on Third-Order Nonlinearities in Porous Silicon Thin Films
The Influence of Quantum Confinement on Third-Order Nonlinearities in Porous Silicon Thin Films
复制标题
量子限制对多孔硅薄膜三阶非线性的影响
作者：
Rihan Wu;Jack Collins;L. Canham;A. Kaplan
我们利用 Z 扫描技术在 800 nm 和 2.4 μm 波长下对传统晶体 (c-Si) 和多孔 (p-Si) 硅的三阶非线性进行了实验研究。应用高斯分解方法从实验结果中提取非线性折射率 n 2 和双光子吸收（TPA）系数 β 。 c-Si 的非线性折射率为 7 ± 2 × 10 − 6 cm 2 /GW，p-Si 的非线性折射率为 − 9 ± 3 × 10 − 5 cm 2 /GW。 c-Si 和 p-Si 的 TPA 系数分别为 2.9 ± 0.9 cm/GW 和 1.0 ± 0.3 cm/GW。我们发现，与 c-Si 相比，p-Si 中的非线性折射有所增强，TPA 受到抑制，并且随着波长的增加，这种增强变得更强。
We present an experimental investigation into the third-order nonlinearity of conventional crystalline (c-Si) and porous (p-Si) silicon with Z-scan technique at 800-nm and 2.4- μ m wavelengths. The Gaussian decomposition method is applied to extract the nonlinear refractive index, n 2 , and the two-photon absorption (TPA) coefficient, β , from the experimental results. The nonlinear refractive index obtained for c-Si is 7 ± 2 × 10 − 6 cm 2 /GW and for p-Si is − 9 ± 3 × 10 − 5 cm 2 /GW. The TPA coefficient was found to be 2.9 ± 0.9 cm/GW and 1.0 ± 0.3 cm/GW for c-Si and p-Si, respectively. We show an enhancement of the nonlinear refraction and a suppression of TPA in p-Si in comparison to c-Si, and the enhancement gets stronger as the wavelength increases.
影响因子：
56.9
作者：
Lin, VSY;Motesharei, K;Ghadiri, MR
通讯作者：
Ghadiri, MR