Sub- 100 nm Nanolithography and Pattern Transfer on Compound Semiconductor Using Sol-Gel-Derived TiO2 Resist
Sub- 100 nm Nanolithography and Pattern Transfer on Compound Semiconductor Using Sol-Gel-Derived TiO2 Resist
复制标题
使用溶胶-凝胶衍生的 TiO2 抗蚀剂在化合物半导体上进行亚 100 nm 纳米光刻和图案转移
DOI：
10.1149/1.2883730
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发表时间：
2008
影响因子：
3.9
通讯作者：
S. Ho
中科院分区：
文献类型：
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作者：
Boyang Liu;S. Ho
亚100 nm化合物半导体图形化的典型方法是基于使用SiO 2或SiN 4作为中间掩模的间接图形转移，这不可避免地增加了图形转移的复杂性并对样品造成潜在的损伤。提出了一种利用Ti（OBun）4溶胶-凝胶法制备的TiO 2抗蚀剂作为掩模直接转移图形的方法。电子束光刻用TiO 2抗蚀剂的最佳剂量为10220 mC/cm 2。样品InP化合物半导体对TiO 2抗蚀剂的刻蚀选择比高达9：1，深宽比大于30：1。获得了各种亚100 nm尺度的电感耦合等离子体蚀刻图案，具有高质量的蚀刻轮廓。最小的特征小至20 nm宽，深度超过600 nm。
Typical methods for sub-100 nm compound semiconductor patterning are based on indirect pattern transfer using SiO 2 or SiN 4 as intermediate masks, which inevitably increase the complexity of pattern transfer and cause potential damage to samples. We present an approach of direct pattern transfer using Ti(OBu n ) 4 sol-gel-derived TiO 2 resist as mask. The optimal dose of TiO 2 resist for E-beam lithography is ∼220 mC/cm 2 . The sample InP compound semiconductor etching selectivity to TiO 2 resist is as high as 9:1 with aspect ratio of over 30:1. Various sub-100 nm scale inductively coupled plasma etching patterns are obtained with a high-quality etching profile. The smallest feature is as small as 20 nm wide with a depth of over 600 nm.
通过循环注入 CH4/H2/Ar 和 O2 对 III-V 半导体进行电子回旋共振反应离子蚀刻
DOI：
--
发表时间：
2002
期刊：
Digest of Papers, International Microprocesses and Nanotechnology Conference 7B-5-2
影响因子：
--
作者：
Seok-Hwan Jeong;Tetsuya Mizumoto;Mitsuru Takenaka;Yoshiaki Nakano;Katsumi Nakatsuhara;片桐祥雅;Nutchai Sroymadee;Seok-Hwan Jeong;Doo Gun Kim;Seok-Hwan Jeong;Yoshiaki Nakano;Seok-Hwan Jeong;Mitsuru Takenaka;Seok-Hwan Jeong;K.-N.Hong;Mitsuru Takenaka;K.-N.Hong;Nobuo Haneji
通讯作者：
Nobuo Haneji