Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
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直接测量和分析总电离剂量对 130 nm PD SOI SRAM 单元静态噪声容限的影响
DOI：
10.1088/1674-1056/26/9/096103
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发表时间：
2017-08
影响因子：
1.7
通讯作者：
Zhao Fazhan
中科院分区：
文献类型：
--
作者：
Zheng Qiwen;Cui Jiangwei;Liu Mengxin;Su D;an;Zhou Hang;Ma Teng;Yu Xuefeng;Lu Wu;Guo Qi;Zhao Fazhan
In this work, the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin (SNM) is specifically designed and irradiated by gamma-ray. Both data sides' SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side's SNM is decreased and the other data side's SNM is increased. Moreover, measurement of SNM under different supply voltages (V-dd) reveals that SNM is more sensitive to TID under lower Vdd. The impact of TID on SNM under data retention V-dd should be tested, because V-dd of SRAM cell under data retention mode is lower than normal Vdd. The mechanism under the above results is analyzed by measurement of I-V characteristics of SRAM cell transistors.
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