Transferred, Ultrathin Oxide Bilayers as Biofluid Barriers for Flexible Electronic Implants
Transferred, Ultrathin Oxide Bilayers as Biofluid Barriers for Flexible Electronic Implants
复制标题
转移的超薄氧化物双层作为柔性电子植入物的生物流体屏障
DOI:
10.1002/adfm.201702284
复制
发表时间:
2018-03
影响因子:
19
通讯作者:
Rogers J.A.
中科院分区:
文献类型:
--
作者:
Song E.;Lee Y.K.;Li R.;Li J.;Jin X.;Yu K.J.;Xie Z.;Fang H.;Zhong Y.;Du H.;Zhang J.;Fang G.;Kim Y.;Yoon Y.;Alam M.A.;Mei Y.;Huang Y.;Rogers J.A.
The work presented here introduces a materials strategy that involves physically transferred, ultrathin layers of silicon dioxide (SiO2) thermally grown on silicon wafers and then coated with hafnium oxide (HfO2) by atomic layer deposition, as barriers that satisfy requirements for even the most challenging flexible electronic devices. Materials and physics aspects of hydrolysis and ionic transport associated with such bilayers define their performance and reliability characteristics. Systematic experimental studies and reactive diffusion modeling suggest that the HfO2 film, even with some density of pinholes, slows dissolution of the underlying SiO2 by orders of magnitude, independent of the concentration of ions in the surrounding biofluids. Accelerated tests that involve immersion in phosphate‐buffered saline solution at a pH of 7.4 and under a constant electrical bias demonstrate that this bilayer barrier can also obstruct the transport of ions that would otherwise cause drifts in the operation of the electronics. Theoretical drift–diffusion modeling defines the coupling of dissolution and ion diffusion, including their effects on device lifetime. Demonstrations of such barriers with passive and active components in thin, flexible electronic test structures highlight the potential advantages for wide applications in chronic biointegrated devices.
登录
查看更多内容
影响因子:
38.3
作者:
通讯作者:
--
DOI:
10.1126/science.1232437
发表时间:
2013-04-12
期刊:
Science (New York, N.Y.)
影响因子:
--
作者:
Kim TI;McCall JG;Jung YH;Huang X;Siuda ER;Li Y;Song J;Song YM;Pao HA;Kim RH;Lu C;Lee SD;Song IS;Shin G;Al-Hasani R;Kim S;Tan MP;Huang Y;Omenetto FG;Rogers JA;Bruchas MR
通讯作者:
Bruchas MR
影响因子:
38.3
作者:
Son, Donghee;Lee, Jongha;Kim, Dae-Hyeong
通讯作者:
Kim, Dae-Hyeong
影响因子:
16.2
作者:
Mayberg, HS;Lozano, AM;Kennedy, SH
通讯作者:
Kennedy, SH
影响因子:
0.5
作者:
Kaur, Navneet;Chou, Tina;Evans, Karleyton C.
通讯作者:
Evans, Karleyton C.