H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface
H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface
复制标题
(100)Ge 表面的 H2S 暴露：(2×1) 电钝化表面的证据
DOI：
10.1063/1.2743385
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发表时间：
2007
影响因子：
4
通讯作者：
M. Heyns
中科院分区：
文献类型：
--
作者：
M. Houssa;D. Nelis;D. Hellin;G. Pourtois;T. Conard;K. Paredis;K. Vanormelingen;A. Vantomme;M. V. Bael;J. Mullens;M. Caymax;M. Meuris;M. Heyns
The experimental study of the bonding geometry of a (100)Ge surface exposed to H2S in the gas phase at 330°C shows that 1 ML S coverage with (2×1) surface reconstruction can be achieved. The amount of S on the Ge surface and the observed surface periodicity can be explained by the formation of disulfide bridges between Ge–Ge dimers on the surface. First-principles molecular dynamics simulations confirm the preserved (2×1) reconstruction after dissociative adsorption of H2S molecules on a (100)Ge (2×1) surface, and predict the formation of (S–H)–(S–H) inter-Ge dimer bridges, i.e., disulfide bridges interacting via hydrogen bonding. The computed energy band gap of this atomic configuration is shown to be free of surface states, a very important finding for the potential application of Ge in future high performance integrated circuits.
影响因子：
4
作者：
K. Kita;K. Kyuno;A. Toriumi
通讯作者：
K. Kita;K. Kyuno;A. Toriumi