Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures.
Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures.
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不同温度下量子阱宽度对AlGaN深紫外发光二极管电致发光性能的影响
DOI：
10.1186/s11671-018-2756-2
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发表时间：
2018-10-23
影响因子：
--
通讯作者：
Zhu Y
中科院分区：
文献类型：
--
作者：
Tan S;Zhang J;Egawa T;Chen G;Luo X;Sun L;Zhu Y
研究了不同温度下量子阱宽度对AlGaN深紫外光发光二极管(DUV LED)电致发光特性的影响。3 5 nm量子线与2 nm量子线LED的最大外量子效率比从室温的6.8增加到5 K的8.2，而3 5 nm量子线与5 nm量子线的最大外量子效率比从RT的4.8下降到5 K的1.6。从理论上分析，由于量子限制效应，2 nm势垒的LED对电子溢出的势垒最浅，而5 nm势垒的LED由于内场较大，电子与空穴的重叠最小。因此，在相同的温度下，量子宽度为3.5 nm的LED具有最大的EQE。随着温度的降低，所有LED的最大EQE电流都减小，这可能是由于流出量子线的电子的增加和空穴浓度的降低所致。这些结果有助于理解DUV LED中偏振效应和电子溢出的组合。
The influence of quantum-well (QW) width on electroluminescence properties of AlGaN deep ultraviolet light-emitting diodes (DUV LEDs) was studied at different temperatures. The maximum external quantum efficiency (EQE) ratios of LED with 3.5 nm QW to that with 2 nm increased from 6.8 at room temperature (RT) to 8.2 at 5 K. However, the ratios for LED with 3.5 nm QW to that with 5 nm QW decreased from 4.8 at RT to 1.6 at 5 K. The different changes of EQE ratios were attributed to the decrease of non-radiative recombination and the increase of volume of the active region. From theoretical analysis, the LED with 2-nm wells had a shallowest barrier for electron overflow due to the quantum-confined effect, whereas the LED with 5-nm wells showed the least overlap of electron and hole due to the large internal field. Therefore, the LED with 3.5 nm QW had the highest maximum EQE at the same temperature. As temperature decreased, the current for maximum EQE decreased for all the LEDs, which was believed to be due to the increase of electron which overflowed out of QWs and the decrease of hole concentration. The results were helpful for understanding the combination of polarization effect and electron overflow in DUV LEDs.
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DOI：
10.1038/lsa.2017.38
发表时间：
2017-08
期刊：
Light, science & applications
影响因子：
--
作者：
Li DB;Sun XJ;Jia YP;Stockman MI;Paudel HP;Song H;Jiang H;Li ZM
通讯作者：
Li ZM
通过银纳米粒子诱导的局域表面等离子体增强黑硅的近红外光吸收
影响因子：
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作者：
Zhang P;Li S;Liu C;Wei X;Wu Z;Jiang Y;Chen Z
通讯作者：
Chen Z
具有 Al 纳米颗粒的 AlGaN 基日盲紫外光电探测器的增强光谱响应
影响因子：
3.8
作者：
Bao, Guanghong;Li, Dabing;Zhang, Zhiwei
通讯作者：
Zhang, Zhiwei
通过纳米等离子体增强实现高性能 GaN 紫外探测器
影响因子：
29.4
作者：
Li, Dabing;Sun, Xiaojuan;Miao, Guoqing
通讯作者：
Miao, Guoqing
影响因子：
--
作者：
Zhang ZH;Huang Chen SW;Chu C;Tian K;Fang M;Zhang Y;Bi W;Kuo HC
通讯作者：
Kuo HC