Growth kinetics of the ferroelectric Al-doped HfO2 thin films via synergistic effect of various essential factors
Growth kinetics of the ferroelectric Al-doped HfO2 thin films via synergistic effect of various essential factors
复制标题
多种要素协同作用下铁电Al掺杂HfO2薄膜的生长动力学
DOI：
10.1016/j.ceramint.2020.10.034
复制
发表时间：
2021-02
影响因子：
5.2
通讯作者：
Shaoan Yan
中科院分区：
文献类型：
--
作者：
Yanhu Mao;Wanli Zhang;Lian Cui;Minghua Tang;Pengyu Su;Xiaojiang Long;Gang Li;Yongguang Xiao;Shaoan Yan
自从掺杂和未掺杂HfO2薄膜中铁电性的意外发现[1]以来，HfO2基铁电薄膜受到了学术界的高度关注。由于其优异的CMOS兼容性、高可扩展性和成熟的可制造性，它们在嵌入式和大容量存储应用中表现出很大的吸引力[2，3]。然而，HfO2薄膜的铁电晶相是一种亚稳相，在电场循环下会引发铁电相向非铁电相的相变[4]。基于密度泛函理论（DFT）计算，HfO2薄膜中铁电相的自由能高于非铁电相的自由能[5]，HfO2基薄膜的铁电性起源于非铁电相的形成，这一观点已被广泛接受。通过热原子层沉积（ALD）制备具有Pca 2 1空间群的中心对称正交相（o相）[6]。然而，不同的制备方法对HfO2基薄膜铁电性的来源有不同的认识.例如，通过脉冲激光沉积（PLD）[7]发现菱形相负责Hf 0.5 Zr 0.5 O 2（HZO）薄膜的外延生长的铁电性，而通过化学溶液沉积（CSD）[8]在铁电钇掺杂的HfO 2薄膜中仅观察到立方相。
Since the unexpected discovery of ferroelectricity in both doped and undoped HfO 2 thin films [1], HfO 2-based ferroelectric thin films have been highly concerned by academics. They exhibits much attractive for the applications of embedded and mass storage due to the excellent CMOS compatibility, high scalability, and mature manufacturability [2, 3]. However, the ferroelectric crystalline phase of HfO 2 thin films is a metastable phase, which would trigger phase transition from ferroelectric phase to non-ferroelectric phases under field cycling [4]. The free energy of the ferroelectric phase in HfO 2 thin films is higher than that of non-ferroelectric phases based on density functional theory (DFT) calculations [5], which further implies that some influencing factors should have worked to facilitate the formation of the ferroelectric phase in HfO 2 thin films.It was generally accepted that the ferroelectricity of HfO 2-based thin films originates from the non-centrosymmetric orthorhombic phase (o-phase) with the space group of Pca2 1 via thermal atom layer deposition (ALD)[6]. However, the origin of the ferroelectricity of HfO 2-based thin films is different with various preparation methods. For instance, a rhombohedral phase was found to be responsible for the ferroelectricity of the epitaxial growth of Hf 0.5 Zr 0.5 O 2 (HZO) thin films through pulsed laser deposition (PLD)[7], while only a cubic phase was observed in the ferroelectric yttrium-doped HfO 2 thin films via chemical solution deposition (CSD)[8].
登录
查看更多内容
硅掺杂氧化铪铁电和类反铁电薄膜的耐久性能：比较研究和预测
影响因子：
9.4
作者：
Liu Xiaohua;Zhou Dayu;Guan Yan;Li Shuaidong;Cao Fei;Dong Xianlin
通讯作者：
Dong Xianlin
影响因子：
41.2
作者：
Yingfen Wei;P. Nukala;M. Salverda;S. Matzen;H. Zhao;J. Momand;A. Everhardt;G. Agnus;G. Blake-G.-Bla
通讯作者：
Yingfen Wei;P. Nukala;M. Salverda;S. Matzen;H. Zhao;J. Momand;A. Everhardt;G. Agnus;G. Blake-G.-Bla
影响因子：
3.2
作者：
Florent, K.;Lavizzari, S.;Van Houdt, J.
通讯作者：
Van Houdt, J.
影响因子：
4
作者：
Robin Materlik;C. Kunneth;T. Mikolajick;A. Kersch
通讯作者：
Robin Materlik;C. Kunneth;T. Mikolajick;A. Kersch
影响因子：
6.7
作者：
Park, Min Hyuk;Lee, Young Hwan;Hwang, Cheol Seong
通讯作者：
Hwang, Cheol Seong