Involvement of flocculin in negative potential-applied ITO electrode adhesion of yeast cells

Involvement of flocculin in negative potential-applied ITO electrode adhesion of yeast cells
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絮凝蛋白参与负电位施加的酵母细胞 ITO 电极粘附

DOI:
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发表时间:
2015
影响因子:
3.2
通讯作者:
F. Abe
F. Abe
中科院分区:
生物学4区
文献类型:
--
作者:
S. Koyama;T. Tsubouchi;K. Usui;K. Uematsu;Akihiro Tame;Y. Nogi;Y. Ohta;Y. Hatada;C. Kato;T. Miwa;T. Toyofuku;Takehiko Nagahama;M. Konishi;Y. Nagano;F. Abe

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本研究的目的是开发一种新的方法,用于附着和培养特定定位的单酵母细胞的微电极表面上的应用程序的弱电位。酿酒酵母二倍体菌株附着在氧化铟锡/玻璃(ITO)电极上,向该电极施加相对于Ag/AgCl在-0.2 V和-0.4 V之间的负电位,而它们不附着在掺杂镓的氧化锌/玻璃电极表面。附着在负电位施加的ITO电极上的酵母细胞显示出正常的细胞增殖。我们发现,絮凝蛋白FLO 10基因被破坏的二倍体BY 4743突变株(flo 10 Δ /flo 10 Δ)几乎完全丧失了粘附到施加负电位的ITO电极的能力。结果表明,二倍体BY 4743 S.酿酒酵母粘附涉及负电位施加的ITO电极和细胞壁表面上的Flo 10蛋白之间的相互作用。ITO电极上活单酵母细胞的微图案化技术和组学技术的组合具有新颖的、高度并行化的、基于微芯片的单细胞分析的潜力,这将有助于新的筛选概念和应用。
The purpose of this study was to develop novel methods for attachment and cultivation of specifically positioned single yeast cells on a microelectrode surface with the application of a weak electrical potential. Saccharomyces cerevisiae diploid strains attached to an indium tin oxide/glass (ITO) electrode to which a negative potential between −0.2 and −0.4 V vs. Ag/AgCl was applied, while they did not adhere to a gallium-doped zinc oxide/glass electrode surface. The yeast cells attached to the negative potential-applied ITO electrodes showed normal cell proliferation. We found that the flocculin FLO10 gene-disrupted diploid BY4743 mutant strain (flo10Δ /flo10Δ) almost completely lost the ability to adhere to the negative potential-applied ITO electrode. Our results indicate that the mechanisms of diploid BY4743 S. cerevisiae adhesion involve interaction between the negative potential-applied ITO electrode and the Flo10 protein on the cell wall surface. A combination of micropatterning techniques of living single yeast cell on the ITO electrode and omics technologies holds potential of novel, highly parallelized, microchip-based single-cell analysis that will contribute to new screening concepts and applications.
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影响因子: 13.5
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