Involvement of flocculin in negative potential-applied ITO electrode adhesion of yeast cells
Involvement of flocculin in negative potential-applied ITO electrode adhesion of yeast cells
复制标题
絮凝蛋白参与负电位施加的酵母细胞 ITO 电极粘附
作者:
S. Koyama;T. Tsubouchi;K. Usui;K. Uematsu;Akihiro Tame;Y. Nogi;Y. Ohta;Y. Hatada;C. Kato;T. Miwa;T. Toyofuku;Takehiko Nagahama;M. Konishi;Y. Nagano;F. Abe
The purpose of this study was to develop novel methods for attachment and cultivation of specifically positioned single yeast cells on a microelectrode surface with the application of a weak electrical potential. Saccharomyces cerevisiae diploid strains attached to an indium tin oxide/glass (ITO) electrode to which a negative potential between −0.2 and −0.4 V vs. Ag/AgCl was applied, while they did not adhere to a gallium-doped zinc oxide/glass electrode surface. The yeast cells attached to the negative potential-applied ITO electrodes showed normal cell proliferation. We found that the flocculin FLO10 gene-disrupted diploid BY4743 mutant strain (flo10Δ /flo10Δ) almost completely lost the ability to adhere to the negative potential-applied ITO electrode. Our results indicate that the mechanisms of diploid BY4743 S. cerevisiae adhesion involve interaction between the negative potential-applied ITO electrode and the Flo10 protein on the cell wall surface. A combination of micropatterning techniques of living single yeast cell on the ITO electrode and omics technologies holds potential of novel, highly parallelized, microchip-based single-cell analysis that will contribute to new screening concepts and applications.
影响因子:
13.5
作者:
Smith, Andrew M.;Ammar, Ron;Nislow, Corey;Giaever, Guri
通讯作者:
Giaever, Guri
影响因子:
15
作者:
Rundqvist, Jonas;Mendoza, Beatriz;Hoh, Jan H.
通讯作者:
Hoh, Jan H.
DOI:
10.1073/pnas.220420397
发表时间:
2000-10-24
影响因子:
11.1
作者:
Guo, B;Styles, CA;Fink, GR
通讯作者:
Fink, GR