A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities.
A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities.
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DOI:
10.1038/s41467-018-02999-2
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发表时间:
2018-02-08
影响因子:
16.6
通讯作者:
Reitzenstein S
中科院分区:
文献类型:
--
作者:
Jagsch ST;Triviño NV;Lohof F;Callsen G;Kalinowski S;Rousseau IM;Barzel R;Carlin JF;Jahnke F;Butté R;Gies C;Hoffmann A;Grandjean N;Reitzenstein S
Exploring the limits of spontaneous emission coupling is not only one of the central goals in the development of nanolasers, it is also highly relevant regarding future large-scale photonic integration requiring energy-efficient coherent light sources with a small footprint. Recent studies in this field have triggered a vivid debate on how to prove and interpret lasing in the high-β regime. We investigate close-to-ideal spontaneous emission coupling in GaN nanobeam lasers grown on silicon. Such nanobeam cavities allow for efficient funneling of spontaneous emission from the quantum well gain material into the laser mode. By performing a comprehensive optical and quantum-optical characterization, supported by microscopic modeling of the nanolasers, we identify high-β lasing at room temperature and show a lasing transition in the absence of a threshold nonlinearity at 156 K. This peculiar characteristic is explained in terms of a temperature and excitation power-dependent interplay between zero-dimensional and two-dimensional gain contributions. Here the authors present temperature dependent studies of GaN nanobeam lasers grown on a silicon substrate and demonstrate high-βlasing at room temperature. Comprehensive optical and quantum-optical characterization, complemented by microscopic modeling, of the nanolasers allow identification of lasing behavior.
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影响因子:
2.5
作者:
HENRY, CH
通讯作者:
HENRY, CH
影响因子:
2.9
作者:
RICE, PR;CARMICHAEL, HJ
通讯作者:
CARMICHAEL, HJ
影响因子:
4
作者:
Ohta, Ryuichi;Ota, Yasutomo;Arakawa, Yasuhiko
通讯作者:
Arakawa, Yasuhiko
DOI:
10.1109/jstqe.2013.2258330
发表时间:
2013-07-01
影响因子:
4.9
作者:
Coldren, Larry A.
通讯作者:
Coldren, Larry A.
DOI:
10.1109/jstqe.2013.2259222
发表时间:
2013-07-01
影响因子:
4.9
作者:
Ning, C. Z.
通讯作者:
Ning, C. Z.