Diffusion coefficients of impurity atoms in BaSi2 epitaxial films grown by molecular beam epitaxy
Diffusion coefficients of impurity atoms in BaSi2 epitaxial films grown by molecular beam epitaxy
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分子束外延生长BaSi2外延薄膜中杂质原子的扩散系数
DOI：
10.7567/jjap.53.04er02
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发表时间：
2013
影响因子：
1.5
通讯作者：
T. Suemasu
中科院分区：
文献类型：
--
作者：
Ning Zhang;K. Nakamura;M. Baba;K. Toko;T. Suemasu
通过分子束外延在 Si(111) 上生长 a 轴取向的 BaSi2 外延薄膜，并使用 Cs+ 离子的二次离子质谱 (SIMS) 评估 Sb 和 As 的扩散系数。通过考虑晶格和晶界 (GB) 扩散，可以很好地再现这些原子的 SIMS 分布。晶格和晶界扩散系数的温度依赖性由 SIMS 曲线确定，并且发现 Sb 的活化能分别为 0.77 和 0.65 eV，As 的活化能分别为 0.91 和 0.88 eV。
a-Axis-oriented BaSi2 epitaxial films were grown on Si(111) by molecular beam epitaxy, and the diffusion coefficients of Sb and As were evaluated using secondary ion mass spectrometry (SIMS) with Cs+ ions. The SIMS profiles of these atoms were reproduced well by considering both the lattice and grain boundary (GB) diffusions. The temperature dependence of lattice and GB diffusion coefficients was determined from the SIMS profiles, and their activation energies were found to be 0.77 and 0.65 eV for Sb, and 0.91 and 0.88 eV for As, respectively.
影响因子：
4
作者：
Du, Weijie;Suzuno, Mitsushi;Suemasu, Takashi
通讯作者：
Suemasu, Takashi