Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching
Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching
复制标题
重镁掺杂 p 型 GaN 蚀刻引起的损伤及其通过低偏置功率电感耦合等离子体反应离子蚀刻的抑制
DOI：
10.35848/1347-4065/abd538
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
H. Amano
中科院分区：
文献类型：
--
作者：
T. Kumabe;Y. Ando;Hirotaka Watanabe;M. Deki;A. Tanaka;S. Nitta;Y. Honda;H. Amano
通过低温光致发光 (PL) 和深度分辨阴极发光 (CL) 光谱研究了重镁掺杂 p 型 GaN ([Mg] = 2 × 1019 cm−3) 中电感耦合等离子体反应离子蚀刻 (ICP-RIE) 引起的损伤。通过 PL 测量，我们发现宽黄色发光 (YL)，最大值约为 2.2-2.3 eV，其起源被认为是孤立的氮空位 (V N)，仅在蚀刻样品中出现。深度分辨 CL 光谱显示，在高 ICP-RIE 偏压功率（P 偏压）下，蚀刻引起的 YL 分布在电子束穿透深度约 200 nm 处。低偏压功率（低 P 偏压）ICP-RIE 将 YL 及其深度分布抑制到与未蚀刻样品相似的水平，并且对于使用 2.5 W P 偏压蚀刻的样品，获得了与未蚀刻样品相当的电流-电压特性。
Inductively coupled plasma–reactive ion etching (ICP–RIE)-induced damage in heavily Mg-doped p-type GaN ([Mg] = 2 × 1019 cm−3) was investigated by low-temperature photoluminescence (PL) and depth-resolved cathodoluminescence (CL) spectroscopy. From PL measurements, we found broad yellow luminescence (YL) with a maximum at around 2.2–2.3 eV, whose origin was considered to be isolated nitrogen vacancies (V N), only in etched samples. The depth-resolved CL spectroscopy revealed that the etching-induced YL was distributed up to the electron-beam penetration depth of around 200 nm at a high ICP–RIE bias power (P bias). Low-bias-power (low-P bias) ICP–RIE suppressed the YL and its depth distribution to levels similar to those of an unetched sample, and a current–voltage characteristic comparable to that of an unetched sample was obtained for a sample etched with P bias of 2.5 W.
影响因子：
4.1
作者：
A. Terano;Hiroyoshi Imadate;K. Shiojima
通讯作者：
A. Terano;Hiroyoshi Imadate;K. Shiojima
影响因子：
4
作者：
In‐Hwan Lee;I. Choi;Cheul‐Ro Lee;S. Noh
通讯作者：
In‐Hwan Lee;I. Choi;Cheul‐Ro Lee;S. Noh
GeCu_2Te_3的硬X射线光电子能谱研究
DOI：
--
发表时间：
2012
期刊：
Proceeding of 24^<th> Symposium on Phase Change Oriented Science 2012
影响因子：
--
作者：
小林啓介;小畠雅明;齊藤雄太;須藤祐司;小池淳一
通讯作者：
小池淳一