Alignment of grain boundary in a Si film crystallized by a linearly polarized laser beam on a glass substrate
Alignment of grain boundary in a Si film crystallized by a linearly polarized laser beam on a glass substrate
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玻璃基板上线偏振激光束晶化硅薄膜晶界的排列
DOI:
10.1063/1.1362336
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发表时间:
2001
影响因子:
4
通讯作者:
A. Shimoyama
中科院分区:
文献类型:
--
作者:
S. Horita;Y. Nakata;A. Shimoyama
We performed crystallization of an amorphous Si film deposited on a Pyrex glass substrate using a Nd:YAG pulse-laser beam with linear polarization. It was found that, in the crystallized film, the grain boundaries were aligned with a period of about 550 nm or the wavelength of the laser beam. Meanwhile, in the Si film crystallized by circularly polarized beam that passed through the λ/4 plate, the grain boundaries were randomly generated. This means that linear polarization of the laser beam is essential to align grain boundaries periodically or to produce a periodic temperature distribution in the irradiated Si film.
影响因子:
4.9
作者:
SAMESHIMA, T;USUI, S;SEKIYA, M
通讯作者:
SEKIYA, M