Two-dimensional periodic alignment of self-assembled Ge islands on patterned Si(001) surfaces
Two-dimensional periodic alignment of self-assembled Ge islands on patterned Si(001) surfaces
复制标题
图案化 Si(001) 表面上自组装 Ge 岛的二维周期性排列
DOI：
10.1063/1.1434307
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发表时间：
2002
影响因子：
4
通讯作者：
S. Leone
中科院分区：
文献类型：
--
作者：
T. Kitajima;Bing Liu;S. Leone
利用Ge分子束外延技术，在由周期性的方形Si台面阵列构成的光刻Si(001)表面上，实现了Ge岛的二维排列。当Si台面阵列的周期减小到140 nm时，实现了一岛一台的关系。Ge岛的平均基区宽度为85 nm，呈截断的金字塔形状，有四个{114}面和一个(001)面。该图案化还用于改善岛尺寸的均匀性。考察了岛的形态与Si台面尺寸和Ge覆盖层尺寸的关系，以阐明Ge岛在Si台面上择优形核的机制。
Two-dimensional alignment of Ge islands is obtained by molecular beam epitaxy of Ge on lithographically patterned Si(001) surfaces composed of periodic arrays of square Si mesas. When the period of the Si mesa arrays is reduced to 140 nm, a “one island on one mesa” relationship is achieved. The Ge islands have an average base width of 85 nm and take on the shape of a truncated pyramid with four {114} facets and a (001) top. The patterning also serves to improve the island size uniformity. The dependencies of the island morphology on the sizes of the Si mesas and Ge coverages are examined to clarify the mechanism of preferential nucleation of Ge islands on the tops of Si mesas.
Si(001)表面电子束激发反应过程的实时光学测量
DOI：
--
发表时间：
2007
期刊：
影响因子：
--
作者：
M. Tanaka;K. Shudo;S. Ohno;T. Iida;S. Ohno;S. Ohno;大野真也;大野真也;大野真也;大野真也
通讯作者：
大野真也