The low friction of a diamond/H-terminated Si[111] sliding system
The low friction of a diamond/H-terminated Si[111] sliding system
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金刚石/H端Si[111]滑动系统的低摩擦
DOI：
10.1109/tmag.2003.808918
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
F. Honda
中科院分区：
文献类型：
--
作者：
H. Masuda;F. Honda
研究了氢封端的Si[111]表面在金刚石滑块滑动时的摩擦学性能，以获得关于Si存储盘与滑块之间接触问题的基本信息。我们专注于接触表面上原子的摩擦学作用，并观察到异常低的摩擦系数：相关滑动表面的0.003，与金刚石/Ag单层/Si的滑动系统一样低的系数[111]。所观察到的2级摩擦减少归因于单层的氢原子终止的Si[111]悬挂键。本文从滑动机理、表面摩擦源及应用等方面讨论了微机械滑动系统的摩擦减小、真空滑动系统的设计等问题。
Hydrogen-terminated Si[111] surfaces have been studied for tribological performance in sliding of a diamond slider to obtain fundamental information on contact problems between a Si memory disk and the slider. We focused on the tribological role of the atoms on the contact surfaces, and observed an extra-ordinarily low coefficient of friction: 0.003 of the relevant sliding surfaces, a coefficient as low as the sliding system of diamond/Ag monolayer/Si[111]. The observed friction reduction of 2-orders was attributed to a monolayer of hydrogen atoms terminating the Si[111] dangling bonds. The results are discussed in terms of the sliding mechanism, surface source of friction and application to reduce memory disk surface damage as the result of probable contact between slider and disk, reduction of the friction of micro-machine sliding system, and design of a sliding system in a vacuum.
影响因子：
4
作者：
HIGASHI, GS;CHABAL, YJ;RAGHAVACHARI, K
通讯作者：
RAGHAVACHARI, K