Understanding the thermal evolution of defects in carbon-implanted ZnO single crystal
Understanding the thermal evolution of defects in carbon-implanted ZnO single crystal
复制标题
了解碳注入 ZnO 单晶缺陷的热演化
DOI：
10.1016/j.ceramint.2019.09.019
复制
发表时间：
2020
影响因子：
5.2
通讯作者：
Liang Fang
中科院分区：
文献类型：
--
作者：
Hong Zhang;Wanjun Li;Guoping Qin;Haibo Ruan;Lijuan Ye;Chunyang Kong;Fang Wu;Liang Fang
缺陷和杂质在控制半导体材料的电学和光学性能方面起着重要作用。本文对水热法生长的氧化锌单晶在室温下注入碳(C)掺杂，然后在不同温度(400~800 °C)的Ar气氛中进行热处理，系统地表征和讨论了与碳有关的缺陷的热演化及其对氧化锌单晶结构、光学和电学性质的影响。结果表明，离子注入导致了严重的晶格无序，离子注入后的退火能促进晶格的重整化，并伴随着晶体质量和平均可见光透过率的提高。此外，还发现八面体碳间隙(Ci)沿平行于c轴的扩散促进了碳sp2团簇的生长，这是因为它在退火过程中具有较低的迁移势垒，这是导致电阻率下降的主要原因。同时，大量的Ci在退火热处理后能够进入VZN形成CZO或与晶格O结合形成(CO)O施主缺陷，主导了电子载流子浓度的增加，增强了510-525 cm−1处的反常拉曼模。这些发现加强了对C杂质施主行为的基本认识。
Defects and impurities play a major role in controlling the electrical and optical properties of semiconductor materials. Herein, hydrothermally grown ZnO single crystals have been implanted with carbon (C) dopants at room temperature and then annealed in argon atmosphere at various temperatures between 400 and 800 °C. The thermal evolution of C-related defects and their effects on the structural, optical and electrical properties of ZnO single crystals were systematically characterized and discussed. The results show ion implantation induces serious lattice disorder, and post-implantation annealing could promote the lattice renormalization, accompanied by an increase in crystal quality and average visible transmittance. Furthermore, it is found that the diffusion of octahedral carbon interstitial (Ci) along parallel to c-axis facilitates the growth of carbon sp2clusters due to its low migration barrier during annealing, which energetically contribute to the decrease of the resistivity. Meanwhile, abundant Ciwill be able to enter into VZnto form CZnor combine with lattice O to form (CO)Odonor defects upon annealing, dominating the increase of electron carrier concentration and enhancing the anomalous Raman mode at 510-525 cm−1. These findings strengthen the fundamental understanding of the donor behavior of C impurities in ZnO.
登录
查看更多内容
无意掺杂碳对氮掺杂ZnO薄膜生长和性能的影响
影响因子：
3.2
作者：
Chen, Hui;Zheng, Youdou;Liu, Wei;Zhu, Shunming;Gu, Shulin
通讯作者：
Gu, Shulin
影响因子：
8.6
作者：
Yanfa Yan;Jingbo Li;S. Wei;M. Al‐Jassim
通讯作者：
Yanfa Yan;Jingbo Li;S. Wei;M. Al‐Jassim
影响因子：
4.6
作者：
Wang YF;Shao YC;Hsieh SH;Chang YK;Yeh PH;Hsueh HC;Chiou JW;Wang HT;Ray SC;Tsai HM;Pao CW;Chen CH;Lin HJ;Lee JF;Wu CT;Wu JJ;Chang YM;Asokan K;Chae KH;Ohigashi T;Takagi Y;Yokoyama T;Kosugi N;Pong WF
通讯作者：
Pong WF
影响因子：
3.7
作者：
Ferrari, AC;Robertson, J
通讯作者：
Robertson, J
影响因子：
4
作者：
Swee Tiam Tan;X. W. Sun;Z. G. Yu;P. Wu;G. Lo;D. Kwong
通讯作者：
Swee Tiam Tan;X. W. Sun;Z. G. Yu;P. Wu;G. Lo;D. Kwong