Influence of unintentional doped carbon on growth and properties of N-doped ZnO films
Influence of unintentional doped carbon on growth and properties of N-doped ZnO films
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无意掺杂碳对氮掺杂ZnO薄膜生长和性能的影响
DOI：
10.1063/1.3033547
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发表时间：
2008-12
影响因子：
3.2
通讯作者：
Gu, Shulin
中科院分区：
文献类型：
--
作者：
Chen, Hui;Zheng, Youdou;Liu, Wei;Zhu, Shunming;Gu, Shulin
研究了金属有机物化学气相沉积（MOCVD）法生长的掺氮ZnO样品在快速热退火条件下的光电性能变化。相应地，在拉曼光谱中观察到碳团簇相关的D和G模式随着退火温度的增加而增加。D和G模式的强度比的增加表明碳团簇的生长，揭示了一个有趣的变化，无意掺杂的碳，这是一个流行的杂质在MOCVD生长的N掺杂ZnO。晶粒中的取代碳或间隙碳可以迁移到晶界，与一些现有的碳簇结合形成更大的碳簇。因此，随着退火温度的升高，锌空位将容易形成，导致在室温下的光致发光的突出的绿色带发射。热退火后，带边发射也发生了明显的变化，出现了几个肩峰，这可能与受主或施主发射有关。
The evolution of optical and electrical properties induced by rapid thermal annealing is studied on nitrogen-doped ZnO samples grown by metal-organic chemical vapor deposition (MOCVD). Correspondingly, in the Raman spectra carbon cluster related D and G modes have been observed to increase with annealing temperature. The increase in the intensity ratio of D and G modes indicates growing of carbon clusters, revealing an interesting change in unintentional doped carbon, which is a popular impurity in MOCVD grown N-doped ZnO. Substitutional or interstitial carbons in the grains may migrate to grain boundaries to incorporate with some existing carbon clusters to form larger ones. Accordingly, zinc vacancies will then be easily formed as annealing temperature increased, resulting in eminent green band emission at room temperature photoluminescence. The band edge emissions also show significant changes with several shoulders observed by thermal annealing, which can be ascribed to acceptor or donor related emiss...
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ZnO金属有机化学气相沉积中的竞争吸附和双位点占据效应
影响因子：
4
作者：
Shi, Y.;Liu, W.;Sun, X. W.;Kwong, D. L.;Lo, G. Q.;Ye, J. D.;Zhang, R.;Zhu, S. M.;Gu, S. L.;Zheng, Y. D.
通讯作者：
Zheng, Y. D.
DOI：
10.1116/1.2167981
发表时间：
2006-06
期刊：
Journal of Vacuum Science and Technology
影响因子：
--
作者：
Xiaonan Li;S. Asher;S. Limpijumnong;Shengbai Zhang;S. Wei;T. Barnes;T. Coutts;R. Noufi
通讯作者：
Xiaonan Li;S. Asher;S. Limpijumnong;Shengbai Zhang;S. Wei;T. Barnes;T. Coutts;R. Noufi
影响因子：
1.8
作者：
Xiaonan Li;S. Asher;S. Limpijumnong;B. Keyes;C. Perkins;T. Barnes;H. Moutinho;J. Luther;Shengbai Zhang;S. Wei;T. Coutts
通讯作者：
Xiaonan Li;S. Asher;S. Limpijumnong;B. Keyes;C. Perkins;T. Barnes;H. Moutinho;J. Luther;Shengbai Zhang;S. Wei;T. Coutts
影响因子：
3.7
作者：
Ferrari, AC;Robertson, J
通讯作者：
Robertson, J
影响因子：
3.2
作者：
Perkins, CL;Lee, SH;Coutts, TJ
通讯作者：
Coutts, TJ