Control of morphology and orientation for textured nanocrystalline indium oxide thin film: A growth zone diagram
Control of morphology and orientation for textured nanocrystalline indium oxide thin film: A growth zone diagram
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织构纳米晶氧化铟薄膜的形貌和取向控制：生长区图
DOI：
10.1016/j.matdes.2017.06.043
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发表时间：
2017-10
影响因子：
8.4
通讯作者：
Wang Gang
中科院分区：
文献类型：
--
作者：
Chen Zimin;Zhuo Yi;Hu Ruiqin;Tu Wenbin;Pei Yanli;Fan Bingfeng;Wang Chengxin;Wang Gang
织构多晶薄膜的功能和性能与其微观结构密切相关。然而，相应的生长机制仍然不清楚，这给薄膜性能的有效工程带来了障碍。本工作制备了织构化的纳米晶氧化铟（nc-In_2 O_3）薄膜，并对其生长机理进行了探讨。观察到的织构形态符合或超出了Wulff定理和货车der Drift生长机制的预测。织构化膜的取向从准平衡生长条件下的（100）-优选变为非平衡生长条件下的（111）-优选。从吸附原子扩散的微观角度，对织构In 2 O3薄膜的生长模式进行了分类，并建立了定量的生长区模型。根据区域模型，可以通过改变生长条件来成功设计和控制薄膜的形态和取向。
The function and performance of textured polycrystalline thin films are closely related to their microstructures. However, the corresponding growth mechanisms remain unclear, which brings obstacles to the effective engineering of the films' properties. In this work, textured nanocrystalline Indium Oxide (nc-In2O3) thin films are prepared and the growth mechanism is explored. Texture morphology within or beyond the prediction of Wulff's theorem and van der Drift's growth mechanism are both observed. The orientation of the textured film changes from (100)-preferred in quasi-equilibrium growth conditions to (111)-preferred in non-equilibrium growth conditions. From a microscopic perspective of adatoms' diffusion, different growth modes for the growth of the textured In2O3thin films is classified and a quantitative growth zone model is developed. According to the zone model, the morphology and orientation of the films could be successfully designed and controlled by changing growth conditions.
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DOI：
10.1016/s0921-5107(98)00209-8
发表时间：
1998-09
影响因子：
3.6
作者：
P. Thilakan;J. Kumar
通讯作者：
P. Thilakan;J. Kumar
影响因子：
2.1
作者：
O. Nilsen;O. Karlsen;A. Kjekshus;H. Fjellvåg
通讯作者：
O. Nilsen;O. Karlsen;A. Kjekshus;H. Fjellvåg
金属有机气相沉积单晶In2O3薄膜的结构和光致发光特性
影响因子：
1.8
作者：
Kong, Lingyi;Ma, Jin;Yang, Fan;Feng, Xianjin
通讯作者：
Feng, Xianjin
影响因子：
16.6
作者：
Xia, Younan;Xiong, Yujie;Lim, Byungkwon;Skrabalak, Sara E.
通讯作者：
Skrabalak, Sara E.
具有高功函数的氯化氧化铟锡电极，可实现有机器件兼容性
影响因子：
56.9
作者：
Helander, M. G.;Wang, Z. B.;Lu, Z. H.
通讯作者：
Lu, Z. H.