High effective terahertz radiation from semi-insulating-GaAs photoconductive antennas with ohmic contact electrodes

High effective terahertz radiation from semi-insulating-GaAs photoconductive antennas with ohmic contact electrodes
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具有欧姆接触电极的半绝缘砷化镓光电导天线的高效太赫兹辐射

DOI:
10.1063/1.3611397
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发表时间:
2011-07
影响因子:
3.2
通讯作者:
--
中科院分区:
物理与天体物理3区
文献类型:
--
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肖特基接触电极光导天线的太赫兹(THz)辐射效率低,因为电场被限制在靠近阳极的狭窄区域。而采用欧姆接触电极的天线缝隙内电场更为均匀,有助于提高太赫兹产生效率。本文分别采用AuGeNi合金电极和Ti/Au电极制备了带有欧姆接触电极的半绝缘(SI)-GaAs天线和带有肖特基接触电极的SI-GaAs天线。测试了两种天线的电压-安培特性和电场分布。在相同条件下,欧姆接触电极天线产生的太赫兹强度比肖特基接触电极天线高3-8倍,较大间隙欧姆接触电极天线具有更高的光能和电能到太赫兹强度的转换效率。
Terahertz (THz) radiation efficiency of a photoconductive antenna with Schottky contact electrodes is low because the electrical field is limited to a narrow region close to the anode. However, the electrical field in the gap of an antenna with ohmic contactelectrodes is more uniform, which contributes to improving THz generation efficiency. In this paper, the semi-insulating (SI)-GaAs antennas with ohmic contactelectrodes and SI-GaAs antennas with Schottky contact electrodes were fabricated by using AuGeNi alloy electrodes and Ti/Au electrodes, respectively. The voltage-ampere characteristic and the distribution of electrical field of the two kinds of antennas were tested. At the same condition, the THz intensity from the antenna with ohmic contactelectrodes was 3-8 times higher than that from the antenna with Schottky contact electrodes, and the larger gap antennas with ohmic contactelectrodes have higher optical and electrical energy to THz intensity conversion efficiency.
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