Enhanced Fluorescence Emission from Silicon-Rich Nitride Guided Mode Resonance Gratings
Enhanced Fluorescence Emission from Silicon-Rich Nitride Guided Mode Resonance Gratings
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富硅氮化物导模谐振光栅的增强荧光发射
DOI：
10.1109/jlt.2013.2294177
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发表时间：
2014-02
影响因子：
4.7
通讯作者：
Chuantong Cheng, Chunxia Wang, Qiang Kan, Beiju H
中科院分区：
文献类型：
--
作者：
Chuantong Cheng, Chunxia Wang, Qiang Kan, Beiju H
采用一维亚波长光栅结构增强了嵌入富氮化硅薄膜中的硅纳米晶体的发射特性。这种增强归因于亚波长光栅支持的导模共振效应。为了获得导模光谱和发射增强因子，进行了反射和光致发光实验。在亚波长光栅的低群速度带边缘，硅纳米晶体的荧光发射增强了10倍。结果表明，富氮化硅是制备高效发光结构的理想材料。富硅氮化材料体系的通用性对实现光活性互补金属氧化物半导体器件具有深远的意义。
A one-dimensional subwavelength grating structure is used to enhance the emission from Si nanocrystals embedded in silicon-rich nitride film. The enhancement is attributed to guided-mode resonance effects supported by subwavelength gratings. Both the reflection and photoluminescence experiments are presented aimed at acquiring guided mode spectrum and the emission enhancement factor. A ten-fold enhancement of the fluorescence emission by Si nanocrystals is obtained at the low group velocity band edge of subwavelength gratings. Our results indicate that silicon-rich nitride is a suitable material for the fabrication of high efficiency light emitting structures. The versatility of silicon-rich nitride material system has a far-reaching significance for the realization of optically active complementary metal oxide semiconductor devices.
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影响因子：
3.8
作者：
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通讯作者：
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影响因子：
4
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作者：
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通讯作者：
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