Use of WN/sub X/ as the diffusion barrier for interconnect copper metallization of InGaP-GaAs HBTs
Use of WN/sub X/ as the diffusion barrier for interconnect copper metallization of InGaP-GaAs HBTs
复制标题
使用 WN/sub X/ 作为 InGaP-GaAs HBT 互连铜金属化的扩散势垒
DOI：
10.1109/ted.2004.829862
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发表时间：
2004
影响因子：
3.1
通讯作者：
Tung
中科院分区：
文献类型：
--
作者：
Shang;E. Chang;Cheng;Ke;Chao;Tung
研究了WN/subX/作为InGaP-GaAs异质结双极晶体管(HBT)互连铜金属化的扩散势垒。采用溅射方法在InGaP-GaP-GaAsHBT衬底上依次沉积了WN/subX/(40 Nm)和Cu(400 Nm)薄膜，分别作为扩散阻挡层和互连金属化层。从扫描电子显微镜、X射线衍射、俄歇电子能谱和方块电阻等数据可以看出，在550/spl deg/C和400/spl deg/C温度下，Cu-WN/subX/-SiN和Cu-WN/subX/-Au结构非常稳定。对V/subCE/=2V，J/subC/=140kA/cm/sup2/的CuWN/subX/金属化HBT进行了电流加速应力测试，应力55h后，这些HBT的电流增益(/SPLβ/)没有退化，应力测试后仍高于100。CuWN/subX/金属化HBT也在250/spl deg/C的温度下进行了25h的热退火，退火后的器件特性没有退化。为了进行对比，还制作了具有Au互连金属化的HBT，这两种器件在应力测试后表现出相似的特性。结果表明，WN/subX/是GaAsHBT互连铜金属化的良好扩散势垒。
Use of WN/sub X/ as the diffusion barrier for interconnect copper metallization of InGaP-GaAs heterojunction bipolar transistors (HBTs) was studied. The WN/sub X/ (40 nm) and Cu (400 nm) films were deposited sequentially on the InGaP-GaAs HBT wafers as the diffusion barrier and interconnect metallization layer, respectively, using the sputtering method. As judged from the data of scanning electron microscopy, X-ray diffraction, Auger electron spectroscopy, and sheet resistance, the Cu--WN/sub X/--SiN and Cu--WN/sub X/--Au structures were very stable up to 550/spl deg/C and 400/spl deg/C annealing, respectively. Current accelerated stress test was conducted on the Cu--WN/sub X/ metallized HBTs with V/sub CE/=2 V, J/sub C/=140 kA/cm/sup 2/ and stressed for 55 h, the current gain (/spl beta/) of these HBTs showed no degradation and was still higher than 100 after the stress test. The Cu--WN/sub X/ metallized HBTs were also thermally annealed at 250/spl deg/C for 25 h and showed no degradation in the device characteristics after the annealing. For comparison, HBTs with Au interconnect metallization were also processed, and these two kinds of devices showed similar characteristics after the stress tests. From these results, it is demonstrated that WN/sub X/ is a good diffusion barrier for the interconnection copper metallization of GaAs HBTs.
影响因子：
3.2
作者：
Chin-An Chang
通讯作者：
Chin-An Chang