Epitaxial growth of large area ZrS2 2D semiconductor films on sapphire for optoelectronics
Epitaxial growth of large area ZrS2 2D semiconductor films on sapphire for optoelectronics
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用于光电子的蓝宝石上大面积 ZrS2 二维半导体薄膜的外延生长
DOI：
10.1007/s12274-022-4308-4
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发表时间：
2022-04
期刊：
影响因子：
9.9
通讯作者：
Xingwang Zhang
中科院分区：
文献类型：
--
作者：
Yan Tian;Yong Cheng;Jidong Huang;Siyu Zhang;Hao Dong;Gaokai Wang;Jingren Chen;Jinliang Wu;Zhigang Yin;Xingwang Zhang
Recently, group-IVB semiconducting transition metal dichalcogenides (TMDs) of ZrS2 have attracted significant research interest due to its layered nature, moderate band gap, and extraordinary physical properties. Most device applications require a deposition of high quality large-area uniform ZrS2 single crystalline films, which has not yet been achieved. In this work, for the first time, we demonstrate the epitaxial growth of high quality large-area uniform ZrS2 films on c-plane sapphire substrates by chemical vapor deposition. An atomically sharp interface is observed due to the supercell matching between ZrS2 and sapphire, and their epitaxial relationship is found to be ZrS2 (0001)[101̄0]∥Al2O3 (0001)[112̄0]. The epitaxial ZrS2 film exhibits n-type semiconductor behavior with a room temperature mobility of 2.4 cm2·V−1·s−1, and the optical phonon is the dominant scattering mechanism at room temperature or above. Furthermore, the optoelectronic applications of ZrS2 films are demonstrated by fabricating photodetector devices. The ZrS2 photodetectors exhibit the excellent comprehensive performance, such as a light on/off ratio of 106 and a specific detectivity of 2.6 × 1012 Jones, which are the highest values compared with the photodetectors based on other group-IVB two-dimensional TMDs.
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影响因子：
29.4
作者：
Denggui Wang;Xingwang Zhang;Gencai Guo;Shihan Gao;Xingxing Li;J. Meng;Z. Yin;Heng Liu;M. Ga
通讯作者：
Denggui Wang;Xingwang Zhang;Gencai Guo;Shihan Gao;Xingxing Li;J. Meng;Z. Yin;Heng Liu;M. Ga
影响因子：
2.7
作者：
Manas-Valero, Samuel;Garcia-Lopez, Victor;Galbiati, Marta
通讯作者：
Galbiati, Marta
影响因子：
6.4
作者：
S. M. Oliver;Joshua J. Fox;A. Hashemi;Akshay Singh;R. Cavalero;S. Yee;D. Snyder;R. Jaramillo
通讯作者：
S. M. Oliver;Joshua J. Fox;A. Hashemi;Akshay Singh;R. Cavalero;S. Yee;D. Snyder;R. Jaramillo
影响因子：
1.6
作者：
Abdulsalam, Mahmud;Joubert, Daniel P.
通讯作者：
Joubert, Daniel P.
影响因子：
9.9
作者：
Yiming Zhu;Xinsheng Wang;Mei Zhang;C. Cai;Liming Xie
通讯作者：
Yiming Zhu;Xinsheng Wang;Mei Zhang;C. Cai;Liming Xie