Experimental Determination of Velocity-Field Characteristic of Holes in GaN
Experimental Determination of Velocity-Field Characteristic of Holes in GaN
复制标题
GaN 空穴速度场特性的实验测定
DOI：
10.1109/led.2019.2953873
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发表时间：
2020
影响因子：
4.9
通讯作者：
S. Chowdhury
中科院分区：
文献类型：
--
作者：
D. Ji;B. Ercan;S. Chowdhury
This study presents a photo-assisted method to measure the drift velocity of carriers in semiconductors, and successfully used to determine the drift velocity of holes in GaN. A p-i-n diode with a buried p-type layer was designed and fabricated on a free-standing GaN substrate. By reverse-biasing the p-i-n diode and illuminating the cathode layer using an ultraviolet light simultaneously, photo-generated holes were injected into the depletion region and accelerated by the electric field to reach the saturation velocity. The drift velocity (<inline-formula> <tex-math notation="LaTeX">$\text{v}_{\text {d}}$ </tex-math></inline-formula>)–electric field (E) characteristic can be obtained from the photocurrent induced by photo-generated holes. The measured hole drift velocity can be written as <inline-formula> <tex-math notation="LaTeX">$v_{\text {d}}=\mu _{\text {LF}}E /[1+(\mu _{\text {LF}}E/v_{{\mathrm {sat}}})^{{\beta }}]^{{1}/\beta }$ </tex-math></inline-formula>, where <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {LF}}\,\,=17$ </tex-math></inline-formula> cm<sup>2</sup>/Vs is the low-field hole mobility, <inline-formula> <tex-math notation="LaTeX">$v_{\text {sat}}= 6.63\times 10^{{6}}$ </tex-math></inline-formula>cm/s is the saturation velocity, <inline-formula> <tex-math notation="LaTeX">$\beta =1.75$ </tex-math></inline-formula> is the fitting parameter. The method presented in this study is a unique way of determining the saturation drift velocity of holes in GaN.
This study presents a photo-assisted method to measure the drift velocity of carriers in semiconductors, and successfully used to determine the drift velocity of holes in GaN. A p-i-n diode with a buried p-type layer was designed and fabricated on a free-standing GaN substrate. By reverse-biasing the p-i-n diode and illuminating the cathode layer using an ultraviolet light simultaneously, photo-generated holes were injected into the depletion region and accelerated by the electric field to reach the saturation velocity. The drift velocity (<inline-formula> <tex-math notation="LaTeX">$\text{v}_{\text {d}}$ </tex-math></inline-formula>)–electric field (E) characteristic can be obtained from the photocurrent induced by photo-generated holes. The measured hole drift velocity can be written as <inline-formula> <tex-math notation="LaTeX">$v_{\text {d}}=\mu _{\text {LF}}E /[1+(\mu _{\text {LF}}E/v_{{\mathrm {sat}}})^{{\beta }}]^{{1}/\beta }$ </tex-math></inline-formula>, where <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {LF}}\,\,=17$ </tex-math></inline-formula> cm<sup>2</sup>/Vs is the low-field hole mobility, <inline-formula> <tex-math notation="LaTeX">$v_{\text {sat}}= 6.63\times 10^{{6}}$ </tex-math></inline-formula>cm/s is the saturation velocity, <inline-formula> <tex-math notation="LaTeX">$\beta =1.75$ </tex-math></inline-formula> is the fitting parameter. The method presented in this study is a unique way of determining the saturation drift velocity of holes in GaN.
利用 GaN/AlGaN/AlN 阶梯量子阱子带间跃迁的电吸收光调制器
DOI：
--
发表时间：
2004
期刊：
第65回応用物理学会学術講演会
影响因子：
--
作者：
ホルムストロムペッテル;松井聰;石井洋平;ヤネスピータ;菊池昭彦;岸野克巳
通讯作者：
岸野克巳
影响因子：
20.6
作者：
Mishra, Umesh K.;Shen, Likun;Wu, Yi-Feng
通讯作者：
Wu, Yi-Feng