H2/N2 plasma damage on porous dielectric SiOCH film evaluated by in situ film characterization and plasma diagnostics
H2/N2 plasma damage on porous dielectric SiOCH film evaluated by in situ film characterization and plasma diagnostics
复制标题
通过原位薄膜表征和等离子体诊断评估 H2/N2 等离子体对多孔介电 SiOCH 薄膜的损伤
DOI：
10.1063/1.3562161
复制
发表时间：
2011
影响因子：
3.2
通讯作者：
T. Ohiwa
中科院分区：
文献类型：
--
作者：
H. Yamamoto;K. Takeda;K. Ishikawa;Masafumi Ito;M. Sekine;M. Hori;T. Kaminatsui;H. Hayashi;I. Sakai;T. Ohiwa
研究了H2/N2等离子体灰化对多孔SiOCH薄膜的损伤机理。多孔SiOCH膜处理的H2/N2等离子体使用100-MHz的电容耦合等离子体蚀刻机。离子，自由基，和真空紫外辐射的多孔SiOCH膜的影响进行了研究，使用原位体分析技术，如光谱椭圆偏振和傅立叶变换红外光谱和非原位膜表征技术，如动态二次离子质谱和X射线光电子能谱。此外，等离子体分析，包括真空紫外吸收光谱进行。薄膜表征和等离子体分析表明，光促进了H自由基对甲基的萃取，而N自由基通过形成氮化物层抑制了Si-CH 3键的萃取。通过对薄膜的表征和等离子体诊断，讨论了H2/N2等离子体损伤机理。
This study investigates the mechanism of H2/N2 plasma ashing damage of porous SiOCH films. Porous SiOCH films were treated by a H2/N2 plasma using a 100-MHz capacitively coupled plasma etcher. The impact of ions, radicals, and vacuum ultraviolet radiation on the porous SiOCH films was investigated using in situ bulk analysis techniques such as spectroscopic ellipsometry and Fourier-transform infrared spectroscopy and ex situ film characterization techniques such as dynamic secondary ion mass spectrometry and x-ray photoelectron spectroscopy. In addition, plasma analysis including vacuum ultraviolet absorption spectroscopy was performed. The film characterization and plasma analysis show that the extraction of methyl by H radicals was enhanced by light while N radicals were responsible for inhibit the extraction of Si-CH3 bonds by forming nitride layer. The H2/N2 plasma damage mechanism is discussed based on characterization of the film and plasma diagnostics.
开发真空紫外吸收光谱技术，采用氮分子微放电空心阴极灯测量等离子体中氮原子的绝对密度
DOI：
--
发表时间：
2001
期刊：
影响因子：
--
作者：
S. Takashima;S. Arai;M. Hori;T. Goto;A. Kono;Masafumi Ito;K. Yoneda
通讯作者：
K. Yoneda