Numerical study of enhanced performance in ZnO-based ultraviolet light-emitting diodes with step graded-composition MgZnO multiple quantum barriers
Numerical study of enhanced performance in ZnO-based ultraviolet light-emitting diodes with step graded-composition MgZnO multiple quantum barriers
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阶梯梯度复合MgZnO多重量子势垒增强ZnO基紫外发光二极管性能的数值研究
DOI：
10.1016/j.spmi.2017.06.012
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发表时间：
2017-09
影响因子：
3.1
通讯作者：
Zhong Z. Y.
中科院分区：
文献类型：
--
作者：
Long H.;Gu J. H.;Wang H. N.;Yang C. Y.;Hou J.;Li S. Z.;Yang Y. Q.;Wang C. L.;Zhao L. L.;Zhong Z. Y.
zno基紫外（UV）发光二极管（led）具有潜在的应用前景。在本研究中，对zno基UV led进行了数值研究，以确定多个量子势垒（qb）中不同阶跃梯度Mg成分对其电学和光学性质的影响。随着qb中Mg含量从n侧增加到p侧，各种led的最大内量子效率从32.6%提高到91.9%。这些改进可以用改进的能带结构来解释，该能带结构改善了从p侧到有源区的空穴注入，改变了多量子阱中的载流子浓度分布，从而导致辐射复合率的提高。可以预期，通过器件结构的精心设计，zno基led的性能可以进一步提高。
ZnO-based ultraviolet (UV) light-emitting diodes (LEDs) are attractive for potential applications. In the study, ZnO-based UV LEDs were numerically investigated to determine the effects of the different step graded Mg compositions in multiple quantum barriers (QBs) on their electrical and optical properties. With the increase of Mg composition for QBs from n-side to p-side, the maximum internal quantum efficiency of various LEDs increase from 32.6% to 91.9%. These improvements can be explained in terms of the modified energy band structures which improve hole injection from p-side to the active region and change the carrier-concentration distributions in multiple quantum wells, then lead to an improvement of radiative recombination rates. One can expect that by the elaborate design of device structure, the performance of ZnO-based LEDs can be further improved.
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