In-Situ Surface Modification of ITO Substrate via Bio-Inspired Mussel Chemistry for Organic Memory Devices.
In-Situ Surface Modification of ITO Substrate via Bio-Inspired Mussel Chemistry for Organic Memory Devices.
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DOI：
10.3390/biomimetics7040237
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发表时间：
2022-12-12
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有机存储器件的发展，从结构构建、原理探索、材料设计等方面考虑，已成为传统硅基信息存储的有力补充。材料在衬底表面上的原位生长可以实现材料与电极之间更紧密的结合。受贻贝化学的启发，在柔性基底上自组装聚多巴胺（PDA）作为连接层，以2-溴异丁酰溴（BiBB）为引发剂，通过表面引发原子转移自由基聚合（SI-ATRP）聚合铱配合物.在此基础上，制备了Al/PDA-PPy 3 Ir/ITO结构的器件。该器件显示出非易失性EEPROM存储器特性，开启电压为-1.0 V，ON/OFF电流比为6.3 × 103。此外，由于有源层固有的柔性，Al/PDA-PPy 3 Ir/ITO器件的存储性能在弯曲状态下保持稳定，可以扩展到柔性存储器件的建立。光谱和电化学表征表明，该器件的电阻存储特性源于在施加电压下PDA和活性层中的铱聚合物（PDA-PPy 3 Ir）之间的电荷转移。
The development of organic memory devices, regarding factors such as structure construction, principle exploration, and material design, has become a powerful supplement to traditional silicon-based information storage. The in-situ growth of materials on substrate surfaces can achieve closer bonding between materials and electrodes. Bio-inspired by mussel chemistry, polydopamine (PDA) was self-assembled on a flexible substrate as a connecting layer, and 2-bromoiso-butyryl bromide (BiBB) was utilized as an initiator for the polymerization of an iridium complex via surface-initiated atom-transfer radical polymerization (SI-ATRP). A device with the structure of Al/PDA-PPy3Ir/ITO was constructed after the deposition of aluminum. The device exhibited a nonvolatile rewritable memory characteristic with a turn-on voltage of −1.0 V and an ON/OFF current ratio of 6.3 × 103. In addition, the memory performance of the Al/PDA-PPy3Ir/ITO device remained stable at bending states due to the intrinsic flexibility of the active layer, which can be expanded into the establishment of flexible memory devices. Spectroscopy and electrochemical characterization suggested that the resistive memory properties of the device stemmed from charge transfer between PDA and iridium polymer in the active layer (PDA-PPy3Ir) under an applied voltage.
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