AlxIn1-xAsySb1-y photodiodes with low avalanche breakdown temperature dependence.
AlxIn1-xAsySb1-y photodiodes with low avalanche breakdown temperature dependence.
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AlxIn1-xAsySb1-y 光电二极管具有低雪崩击穿温度依赖性。
DOI：
10.1364/oe.25.024340
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发表时间：
2017
期刊：
影响因子：
3.8
通讯作者：
J. Campbell
中科院分区：
文献类型：
--
作者：
A. Jones;Yuan Yuan;M. Ren;S. Maddox;S. Bank;J. Campbell
报道了具有高温稳定性的Al_xIn_(1-x)AsySb_(1-y)PIN和分离吸收、电荷与倍增(SACM)雪崩光电二极管。这项工作是基于对这些器件在223K到363K温度范围内的雪崩击穿电压的测量，结果表明，击穿电压温度系数低于用其他材料制成的具有类似倍增层厚度的APD。
We report AlxIn1-xAsySb1-y PIN and Separate Absorption, Charge and Multiplication (SACM) avalanche photodiodes (APDs) with high temperature stability. This work is based on measurements of avalanche breakdown voltage of these devices for temperatures between 223 K and 363 K. Breakdown voltage temperature coefficients are shown to be lower than those of APDs fabricated with other materials with comparable multiplication layer thicknesses.
影响因子：
2.5
作者：
Tan, Lionel Juen Jin;Ong, Daniel Swee Guan;David, John Paul Raj
通讯作者：
David, John Paul Raj