Room temperature epitaxial growth of Ag on low‐index Si surfaces by a partially ionized beam
Room temperature epitaxial growth of Ag on low‐index Si surfaces by a partially ionized beam
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部分电离束在低折射率 Si 表面上室温外延生长 Ag
DOI：
10.1063/1.351876
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发表时间：
1992
影响因子：
3.2
通讯作者：
T. Lu
中科院分区：
文献类型：
--
作者：
T. C. Nason;L. You;T. Lu
研究了1000 ~ 1500 A Ag薄膜在HF - Si衬底上的室温生长与沉积过程中自离子（Ag+）能量的关系。在所有情况下，薄膜都含有外延晶粒和随机取向（111）晶粒的混合物。取向为Ag(111)/Si（111）孪晶，A型孪晶（Ag < 110 > //Si < 110 >）和B型孪晶（Ag < 110 > //Si < 114 >）；Ag(110)/Si(110), Ag < 001 > //Si < 001 >；Ag(100)/Si(100), Ag < 011 > //Si < 011 >。所有三种结构都将三个Si原子行与四个Ag原子行相匹配。从外延晶与非外延晶的比值来看，外延晶的强度呈（111）~(110)~（100）数量级递减。在沉积过程中增加Ag+离子能量通常会降低这一比率。Ag/Si（100）薄膜的退火诱导了晶粒的优先生长。
The room temperature growth of 1000–1500 A Ag films on HF‐dipped Si substrates is studied as a function of self‐ion (Ag+) energy during deposition. In all cases the films contained a mixture of epitaxial grains and randomly oriented (111) grains. The orientations observed were Ag(111)/Si(111) with both type A (Ag〈110〉//Si〈110〉) and type B (Ag〈110〉//Si〈114〉) twins; Ag(110)/Si(110) with Ag〈001〉//Si〈001〉; and Ag(100)/Si(100) with Ag〈011〉//Si〈011〉. All three constructions match three Si atomic rows with four Ag rows. As judged by the ratio of epitaxial to nonepitaxial grains, the strength of the epitaxy was seen to decrease in the order (111)≳(110)≳(100). Increasing the Ag+ ion energy during the deposition was generally seen to decrease this ratio. Annealing of the Ag/Si(100) films induced preferential (100) grain growth.
影响因子：
4
作者：
HIGASHI, GS;CHABAL, YJ;RAGHAVACHARI, K
通讯作者：
RAGHAVACHARI, K