Industrial-University Cooperative Research Activity: Uniaxial Stress-Deep Level Transient Spectroscopy Studies ofDefects in Semiconductors (Materials Research)

这项研究的目的是通过观察沿不同晶体方向施加的应力的单轴应力分裂来确定缺陷对称性信息。研究人员将对已进行应力EPR或光学实验的辐照硅中的缺陷进行调查。许多这种类型的中子产生的缺陷的能级将被确定，并与已知的EPR缺陷结构相关联。这种DLTS应力工作将扩展到包含大量有趣缺陷的其他材料，这些缺陷通常不存在对称信息。除了辐照引起的缺陷外，GaAs中还存在许多本征缺陷。仔细研究这种材料中缺陷在应力下的性质将是非常有用的，即使在那些无法辨别缺陷的具体化学性质的情况下也是如此。

It is the purpose of this research to determine defect symmetry information, from an experiment observing the uniaxial stress splitting for stresses applied along different crystallographic directions. Researchers will investigate defects in irradiated silicon for which stress EPR or optical experiments have been performed. The energy levels of a number of neutron-produced defects of this type will be determined and correlated with known EPR defect structures. This DLTS stress work will be extended to other materials which contain a wealth of interesting defects for which often no symmetry information exists. There are many native defects in GaAs in addition to irradiation-induced defects. A careful study of the properties of defects under stress in this material will be extremely useful, even in those cases where the specific chemical nature of the defect cannot be discerned.