Quantizing Effects in Submicron Field Effect Transistors

电子波函数的空间量子化和 伴随相空间产生的电子散射 限制将变得明显，因为当前微米尺寸的场效应 晶体管缩小到1/4微米大小。实验将 用于观察电磁感应电子跃迁 在尺寸为0.1至0.3的器件中的空间量化电平之间 嗯. 量子统计极限和行为的问题，离散 能级结构和单电子行为 通过这些研究。

Spatial quantization of the electron wavefunction and changes in electron scattering which result from the concomitant phase space restrictions will become evident as current micron-size field effect transistors are shrunk to 1/4 micron sizes. Experiments will be conducted to observe electromagnetically induced electron transitions between spatially quantized levels in devices of dimension 0.1 to 0.3 um. The issues of quantum-statistical limits and behavior, discrete energy level structure, and single electron behavior may be addressed by these studies.