Inversion/Accumulation Layer Transport on InP and InGaAs

提出的研究将努力理解InP和InGaAs表面反演和积累层中的二维输运现象。目前缺乏认识的原因是由于表面区域的结构/化学复杂性以及实验数据和InP/InGaAs器件的输运建模不足。本文提出的研究将提供详细的输运测量和界面分析，在此基础上可以建立现实的输运模型。这将增加对绝缘体-半导体界面二维输运的理解，并促进InP和InGaAs上MOS器件的发展。

The proposed research will endeavor to understand 2D transport phenomena in surface inversion and accumulation layers on InP and InGaAs. The present lack of understanding is caused both by the structural/chemical complexity of the surface region and insufficient experimental data and transport modeling of InP/InGaAs devices. The research proposed here will provide detailed transport measurements and interfacial analysis upon which realistic transport models can be founded. This will provide an increased understanding 2D transport at insulator-semiconductor interfaces and advance the development of the MOS devices on InP and InGaAs.